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Infineon CoolMOS C3 N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220FP SPA15N60C3XKSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.83mm
Length 10.65mm
Model SPA15N60C3XKSA1
Width 4.85mm
Mount Type Through Hole
Series CoolMOS C3
Maximum Operating Temperature 150°C
Package Type TO-220FP
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 15A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 0.28Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 156W
Typical Gate Charge Qg @ Vgs 63nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • The CoolMOS C3 series delivers high efficiency power switching performance.
  • Maximum power dissipation is rated at 156 W to ensure reliable thermal performance.
  • Three-pin TO-220FP package supports through-hole mounting.
  • Maximum drain-source resistance (Rds) is 0.28 ohms for low conduction losses.
  • Operating temperature range from -55°C to 150°C supports demanding environments.
  • Typical gate charge (Qg) is 63 nC at Vgs = 10 V for fast switching.
  • Maximum gate-source voltage tolerance is ±20 V providing robust gate control.

Product Description

Infineon SPA15N60C3XKSA1 is a CoolMOS C3 N-Channel MOSFET designed to provide efficient power switching for industrial and electronic applications. It supports a maximum continuous drain current of 15 A and withstands drain-source voltages up to 600 V in a 3-pin TO-220FP through-hole package.

This MOSFET is an enhancement-mode device featuring a low drain-source resistance (Rds) of 0.28 ohms, which minimizes conduction losses during operation. The device handles power dissipation of up to 156 W, making it suitable for medium power applications requiring reliable thermal performance.

The gate characteristics include a typical gate charge of 63 nC at Vgs of 10 V, enabling fast switching speeds for enhanced efficiency in power conversion circuits. With a gate-source voltage tolerance of -20 V to +20 V, the MOSFET offers robust gate control against voltage spikes.

Operating temperature ranges from -55°C to 150°C, ensuring stable functionality in harsh and variable industrial environments. The compact dimensions of the TO-220FP package (approximately 10.65 mm in length, 9.83 mm in height, and 4.85 mm in width) facilitate integration into diverse power electronics designs.

The CoolMOS C3 technology combines performance and cost-effectiveness for applications in power supplies, motor control, and inverter circuits. The TO-220FP package provides electrical isolation and efficient heat dissipation for enhanced device reliability.

This MOSFET is ideal for use in industrial automation, power management systems, renewable energy inverters, and motor drives. CoolMOS devices maintain high efficiency while improving power density and system cost savings.

Infineon delivers globally recognized quality and robust manufacturing standards for semiconductor devices. Discover more products in the MOSFET category for advanced semiconductor components from Infineon at EnvMart, your solution partner in electronic components.

Infineon CoolMOS C3 N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220FP SPA15N60C3XKSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 15 A.

This N-channel MOSFET can withstand a maximum drain-source voltage of 600 V.

The maximum power dissipation for this unit is rated at 156 W.

The maximum drain-source resistance (Rds) is 0.28 ohms, which helps minimize conduction losses.

The typical gate charge (Qg) at Vgs = 10 V is 63 nC, allowing for fast switching speeds.

It operates within a temperature range of -55°C to 150°C, making it suitable for demanding environments.

The TO-220FP package supports through-hole mounting.

The dimensions are approximately 10.65 mm in length, 9.83 mm in height, and 4.85 mm in width.

The maximum gate-source voltage tolerance is ±20 V, providing robust gate control.

This model is suitable for applications in power supplies, motor control, and inverter circuits.

This device features an N-channel configuration, which is typical for enhancement-mode MOSFETs.

The forward voltage (Vf) for this model is 1.2 V.

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