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Infineon CoolMOS C3 N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-220 SPA11N60C3XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.83mm |
| Length | 10.65mm |
| Model | SPA11N60C3XKSA1 |
| Width | 4.85mm |
| Mount Type | Through Hole |
| Series | CoolMOS C3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 380mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 33W |
| Typical Gate Charge Qg @ Vgs | 45nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports enhancement channel mode for efficient power switching.
- Maximum continuous drain current of 11 amperes ensures robust performance.
- Low maximum drain-source resistance of 380 milliohms reduces conduction losses.
- Typical gate charge of 45 nanocoulombs enables fast switching.
- Wide operating temperature range from -55°C to 150°C suits industrial environments.
- Packaged in a durable TO-220 through-hole mount for reliable installation.
- Maximum power dissipation rating of 33 watts for high power applications.
- Forward voltage of 1 volt ensures efficient conduction.
Product Description
Infineon SPA11N60C3XKSA1 CoolMOS C3 N-Channel MOSFET is a high-efficiency power transistor designed for industrial and electronic applications requiring reliable switching and high current capacity.
This MOSFET features a 3-pin TO-220 through-hole package, ideal for easy mounting and integration into power circuits. It supports enhancement mode operation with a maximum continuous drain current of 11 amperes and withstands drain-source voltages up to 650 volts, ensuring versatility across a wide range of power supply designs.
The low on-resistance of 380 milliohms helps minimize conduction losses, making it suitable for performance-critical applications. The device features a typical gate charge of 45 nanocoulombs for fast switching capabilities, paired with a maximum gate-source voltage rating of ±20 volts for robust gate protection.
Designed to operate under harsh environmental conditions, it supports a broad temperature range from -55°C to 150°C. With a power dissipation rating of 33 watts and a forward voltage drop of 1 volt, it offers efficient power handling in compact form factors.
Supports enhancement channel mode for efficient power switching. Maximum continuous drain current of 11 amperes ensures robust performance. Low maximum drain-source resistance of 380 milliohms reduces conduction losses. Typical gate charge of 45 nanocoulombs enables fast switching.
Wide operating temperature range from -55°C to 150°C suits industrial environments. Packaged in a durable TO-220 through-hole mount for reliable installation. Maximum power dissipation rating of 33 watts for high power applications.
Forward voltage of 1 volt ensures efficient conduction. Maximum gate-source voltage of ±20 volts protects gate terminals.
This Power MOSFET is well-suited for industrial electronics, power supplies, motor control, and various automotive and manufacturing systems requiring reliable high voltage switching components.
Browse our comprehensive selection of Infineon semiconductors and MOSFETs for advanced power management solutions at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 amperes.
It can withstand a maximum drain-source voltage of 650 volts.
The maximum power dissipation rating is 33 watts.
The typical gate charge is 45 nanocoulombs.
The maximum gate-source voltage rating is ±20 volts.
This MOSFET is packaged in a TO-220 through-hole mount.
It operates within a temperature range of -55°C to 150°C.
The maximum drain-source resistance is 380 milliohms.
This model has 3 pins.
It utilizes an N-channel type.
It is suitable for industrial electronics, power supplies, motor control, and automotive systems requiring reliable high voltage switching.
The forward voltage drop is 1 volt.
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