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DiodesZetex P-Channel MOSFET 3.6 A 20 V Enhancement SOT-23 DMP2035U

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model DMP2035U
Width 1.4mm
Mount Type Surface
Series DMP2035U
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 3.6A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 62mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 810mW
Typical Gate Charge Qg @ Vgs 15.4nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -1V

Key Features

  • This MOSFET operates in enhancement channel mode for improved performance.
  • Feature low maximum drain-source resistance of 62 milliohms for efficiency.
  • Designed for surface mount technology with 3 pins in a small form factor.
  • Supports operating temperatures from -55°C to 150°C for a wide range of applications.
  • Has a maximum power dissipation of 810 milliwatts allowing stable operation under load.
  • Typical gate charge is 15.4 nanocoulombs at Vgs, providing fast switching.
  • Compliant with automotive standard AEC-Q101 ensuring quality and reliability.
  • Suitable for industrial, automotive, and electronic circuit applications requiring reliable switching.

Product Description

DiodesZetex DMP2035U P-Channel MOSFET is a high-performance transistor designed for switching and amplification in electronic circuits. Featuring a continuous drain current rating of 3.6 A and a maximum drain-source voltage of 20 V, this enhancement mode MOSFET in a compact SOT-23 package is ideal for surface mounting in space-constrained applications.

Its maximum drain-source resistance of 62 milliohms ensures low conduction losses, increasing energy efficiency. The device can reliably operate across a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial environments.

The transistor exhibits a maximum power dissipation of 810 milliwatts and has a typical gate charge of 15.4 nanocoulombs, which allows for fast switching speeds. Forward voltage is rated at -1 V, and the maximum gate-source voltage is ±8 V.

Built to conform with the automotive standard AEC-Q101, the DMP2035U meets stringent requirements for quality and long-term reliability in automotive and industrial applications. This MOSFET is suited for industrial electronics, automotive systems, power management circuits, and switching regulators.

Its compact dimensions (3 mm length, 1.4 mm width, 1.1 mm height) facilitate integration into miniaturized PCB layouts. Manufactured in China, the product meets industry standards for discrete semiconductor components.

For engineers and developers looking for reliable P-Channel MOSFETs, DiodesZetex DMP2035U offers quality assurance and robust electrical characteristics. Explore more MOSFETs and semiconductor products on EnvMart for your design and manufacturing needs.

DiodesZetex P-Channel MOSFET 3.6 A 20 V Enhancement SOT-23 DMP2035U
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.6 A.

It has a maximum drain-source voltage of 20 V.

This model comes in a SOT-23 package type, which is suitable for surface mounting.

The maximum power dissipation for this MOSFET is 810 milliwatts.

The dimensions are 1.1 mm in height, 3 mm in length, and 1.4 mm in width.

The typical gate charge is 15.4 nanocoulombs at Vgs.

It operates within a temperature range of -55°C to 150°C.

This model is compliant with the automotive standard AEC-Q101.

The maximum drain-source resistance is 62 milliohms.

The forward voltage is rated at -1 V.

It has a total of 3 pins.

This model operates in enhancement channel mode.

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