DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET Dual N/P-Channel 840 mA 20 V Enhancement 6-Pin SC-88 DMG1016UDW-7

DiodesZetex DMG1016UDW-7 is a high-performance isolated dual MOSFET device featuring two transistor types: Type P and Type N-Channel. This semiconductor device is rated for a maximum continuous drain current of 840 mA and a maximum drain-source voltage of 20 V, suitable for power switching, amplification, and control circuits in industrial and automotive systems.

The enhancement mode channel configuration ensures that the MOSFET remains off without gate voltage, providing reliable switching behavior. It is packaged in a compact 6-pin SC-88 surface mount package, measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height, enabling usage in dense circuit board assemblies.

This device supports a typical gate charge of 736.6 nC at a gate-source voltage of 6 V, enabling efficient switching performance. The maximum drain-source resistance is only 1.5 mΩ, contributing to lower conduction losses and higher efficiency in power management applications.

Operating temperature ranges from -55°C to +150°C, making it suitable for demanding automotive, industrial, and electronics environments. The transistor adheres to rigorous quality standards including MIL-STD-202, UL 94V-0 flame retardant certification, RoHS compliance, AEC-Q100, AEC-Q101 automobile standards, and J-STD-020.

Typical applications include power management circuits in automotive electronics, industrial automation, mobile devices, and other high-reliability electronics systems. This MOSFET features isolated dual transistor configuration for efficient switching applications.

The device supports a maximum continuous drain current of 840 mA and maximum drain-source voltage of 20 V. Operating temperature ranges from -55°C to +150°C, suitable for harsh environments. Packaged as a compact 6-pin SC-88 surface mount for space-constrained designs.

Enhancement mode channel operation with a low maximum drain-source resistance of 1.5 mΩ. Typical gate charge is 736.6 nC at rated gate-source voltage, facilitating high-speed switching. Certified by automotive standards AEC-Q100, AEC-Q101, and compliant with MIL-STD-202 and RoHS regulations.

Designed for automotive, industrial, and power management semiconductor applications. Explore more semiconductor components and MOSFETs at EnvMart for high-quality, reliable solutions in electronics design and manufacturing.