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Infineon HEXFET N-Channel MOSFET 25 V, 5.8 A, Enhancement Type, 3-Pin SOT-23 IRFML8244TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRFML8244TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.8A |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 41mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 5.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This enhancement-mode MOSFET has a low Rds(on) of 41 milliohms, minimizing conduction losses.
- Maximum power dissipation of 1.25 W ensures reliable thermal management.
- Operates over a temperature range from -55°C to 150°C for demanding environments.
- Typical gate charge of 5.4 nC supports fast switching performance.
- Package supports surface mount assembly with a small footprint of 3.04 mm length.
- Forward voltage drop is 1.2 V, reducing voltage loss under load.
- Maximum gate-source voltage rating of ±20 V protects device integrity.
- Ideal for portable power-management, DC-DC converters, motor drivers, battery protection, and consumer electronics.
Product Description
Infineon IRFML8244TRPBF HEXFET N-Channel MOSFET is a compact, surface-mount enhancement device designed for power switching and signal-level control in compact electronic assemblies.
It features a maximum drain-source voltage of 25 V and continuous drain current of 5.8 A, making it suitable for medium-voltage switching applications with low conduction losses due to its 41 milliohm on-resistance.
The device supports operation over a wide thermal range from -55°C to 150°C, accommodating both low-temperature starts and elevated ambient conditions commonly encountered in industrial and consumer electronics.
This three-pin SOT-23 package optimizes space on printed circuit boards, making the device ideal for use where compact form factor and efficiency are essential.
Key electrical characteristics include a typical gate charge of 5.4 nC enabling fast switching, a forward voltage of 1.2 V to minimize voltage drop, and maximum gate-source voltage ratings of ±20 V to prevent device damage.
The IRFML8244TRPBF is frequently employed in DC-DC step-down converters, portable power management modules, motor drivers for small actuators, battery protection and charging circuits, and high-density consumer electronics boards.
This MOSFET provides efficient low-conduction losses with the 41mΩ Rds(on) characteristic. 5.8 A continuous current rating supports higher load capabilities. Robust power dissipation rating of 1.25 W aids in thermal management.
Surface-mount SOT-23 package minimizes PCB space requirements. Wide operating temperature range from -55°C to 150°C. Fast switching enabled by low gate charge of 5.4 nC. Maximum gate-source voltage protection at ±20 V. Forward voltage of 1.2 V reduces energy loss under load.
This product is designed for industrial, electronic manufacturing, portable device power management, and automotive electronics applications. Browse the rich selection of discrete semiconductors and MOSFETs at EnvMart for reliable power switching solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.8 A, making it suitable for medium-voltage switching applications.
This MOSFET has a maximum drain-source voltage rating of 25 V, allowing it to operate effectively in various applications.
The on-resistance (Rds(on)) of this model is 41 milliohms, which helps minimize conduction losses during operation.
The typical gate charge for this model is 5.4 nC, supporting fast switching performance in electronic applications.
This MOSFET operates over a wide temperature range from -55°C to 150°C, accommodating various environmental conditions.
The SOT-23 package has dimensions of 3.04 mm in length, 1.4 mm in width, and a height of 1.02 mm, making it compact for PCB applications.
The maximum power dissipation for this MOSFET is 1.25 W, which aids in effective thermal management.
The forward voltage drop for this model is 1.2 V, which helps reduce voltage loss under load conditions.
The maximum gate-source voltage rating for this device is ±20 V, which protects the device's integrity during operation.
This MOSFET is suitable for applications such as DC-DC converters, motor drivers, battery protection, and consumer electronics.
This model supports surface mount assembly, which is advantageous for compact electronic designs.
This device utilizes an N-channel configuration, which is common for enhancement-mode MOSFETs.
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