$0.13
$0.13
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET Type P-Channel MOSFET, 3.6 A, 30 V Enhancement Mode, Surface Mount SOT-23 3-Pin IRLML9301TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML9301TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 64mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 4.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device supports a maximum continuous drain current of 3.6 amperes.
- It operates with a maximum drain-source voltage of 30 volts, suitable for low voltage power management applications.
- The low on-resistance value of 64 milliohms reduces heat generation and improves efficiency.
- The MOSFET features an enhancement channel mode, ensuring reliable switching control and power savings.
- It has a typical gate charge of 4.8 nanoCoulombs at Vgs for efficient switching performance.
- The gate-source voltage rating is -20 to +20 volts, ensuring tolerance for control signals.
- Maximum power dissipation is rated at 1.3 watts for thermal management in compact circuits.
- Operating temperature range spans from -55°C to +150°C, allowing use in harsh environments.
Product Description
Infineon IRLML9301TRPBF HEXFET Type P-Channel MOSFET is engineered for efficient power management in electronic circuits requiring reliable switching and thermal resilience. This enhancement mode MOSFET supports a continuous drain current of 3.6 A and a drain-source voltage of up to 30 V, making it suitable for low voltage applications including portable gadgets, automation control systems, audio amplifiers, and DC-DC converters.
The device features a low on-resistance of 64 mΩ, minimizing heat generation and improving overall power efficiency during operation. Its typical gate charge of 4.8 nC and wide gate-source voltage tolerance (-20 to +20 V) allow for effective switching control without power loss. The MOSFET is packaged in a compact 3-pin SOT-23 surface mount package, enabling compact board layouts and easy assembly.
Designed to operate reliably between -55°C and 150°C, it suits high-temperature environments and applications with intensive use. Its small dimensions (3.04 mm length, 1.4 mm width, and 1.02 mm height) aid integration into compact electronic designs requiring robust power switching solutions.
Common industrial and commercial applications include driving motors in robotics, managing power in renewable energy systems, and signal processing in audio equipment. The product adheres to no specific automotive standards or approvals, focusing on general semiconductor performance reliability.
The enhancement mode configuration allows for efficient and reliable operation in switching circuits. Low on-resistance reduces losses and extends component life under high current. Wide gate-source voltage rating supports durable control signal handling.
High maximum operating temperature enables use in harsh or demanding environments. Compact SOT-23 packaging supports space-efficient PCB layouts. Suitable for use in portable electronics, automation, renewable energy, and robotics.
Thermally optimized design ensures stable performance at elevated temperatures. Explore more MOSFET options and semiconductor products at EnvMart to meet your circuit design and power management needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 3.6 amperes.
It operates with a maximum drain-source voltage of 30 volts.
The typical gate charge at Vgs is 4.8 nanoCoulombs.
The low on-resistance value is 64 milliohms, which helps reduce heat generation.
It operates within a temperature range of -55°C to +150°C.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum power dissipation is rated at 1.3 watts.
This device has a pin count of 3.
It features a P-channel type configuration.
The gate-source voltage rating is from -20 to +20 volts.
It is suitable for low voltage applications including portable gadgets, automation control systems, and audio amplifiers.
This model operates in enhancement mode, ensuring reliable switching control.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$0.13
$0.13
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent