DiodesZetex Bipolar NPN Transistor ZXTN19060CFFTA 60 V 5.5 A, 3-Pin SOT-23 Package

DiodesZetex ZXTN19060CFFTA Bipolar NPN Transistor is purpose-built for electronic power and signal switching applications requiring moderate voltage and high current capacity. The device operates with a maximum collector current of 5.5 A and withstands collector-emitter voltages up to 60 V, making it suitable for medium power amplifiers and switching circuits in industrial and automotive electronics.

Packaged in the SOT-23 surface mount package, the transistor is well-suited for compact PCB layouts. The high transition frequency of 130 MHz enables excellent performance in RF and high-speed switching applications. Its wide operating temperature range from -55°C to +150°C and AEC-Q101 automotive qualification confirm its durability and reliability in demanding environments.

This transistor features a minimum current gain of 30 and a maximum power dissipation of 2 watts, balancing power and efficiency for robust switching tasks. It contains three pins for collector, base, and emitter connections in a single NPN configuration, making it a standard component for discrete semiconductor circuits.

Alongside electronic manufacturing and assembly, the device finds uses in industrial machinery control, automotive electronics, telecommunications, and general-purpose electronic equipment. The device does not include additional certifications beyond the automotive standard but is designed for reliable general use.

The transistor is housed in a compact 3-Pin SOT-23 surface mount package. Maximum Collector Emitter Voltage (Vceo) is 60 volts, suitable for medium-power applications. Maximum DC Collector Current (Idc) of 5.5 amperes supports high current switching.

Has a high transition frequency of 130 MHz for efficient operation in high-frequency circuits. Includes automotive grade AEC-Q101 certification ensuring reliability under harsh conditions. Operates reliably from -55°C to +150°C, covering a wide temperature range.

Features a minimum DC current gain (hFE) of 30 providing effective amplification. Designed with single transistor NPN configuration for general purpose switching and amplification. Maximum power dissipation rating of 2 W ensures stable performance under load.

Device dimensions are compact: 3 mm length, 2.5 mm width, and 1 mm height optimising PCB space.

Explore the full range of DiodesZetex Bipolar Transistors in the Electronics & Electricals category at EnvMart for your industrial, automotive, and telecommunications assembly needs.