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Vishay TrenchFET Type P-Channel MOSFET, 2.7 A Continuous Drain Current, 30 V Drain Source Voltage, 3-Pin SI2303CDS-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2303CDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.33Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Utilizes TrenchFET technology for improved efficiency and low on-resistance.
- Compact 3-pin SOT-23 package suitable for space-constrained PCB layouts.
- Enhancement mode channel operation offers reliable switching characteristics.
- Maximum power dissipation of 1 watt and typical gate charge of 4 nC support high-speed switching applications.
- Wide operating temperature range from -55°C to 150°C ensures durability.
- Maximum drain source resistance of 0.33 ohms minimizes power loss during conduction.
- Forward voltage of -1.2 volts and gate source voltage range from -20 V to +20 V provide stable control.
- Complies with IEC 61249-2-21 standards ensuring quality and reliability.
Product Description
Vishay SI2303CDS-T1-GE3 is a TrenchFET type P-Channel MOSFET designed for surface mount technology with a 3-pin SOT-23 package. It supports a maximum continuous drain current of 2.7 A and maximum drain source voltage of 30 V, suitable for efficient electronic switching and amplification applications.
This enhancement mode MOSFET features a low maximum drain source resistance of 0.33 ohms, providing minimal conduction losses. It has a maximum power dissipation rating of 1 watt, making it suitable for medium power electronic circuits. Typical gate charge is 4 nC at a gate-source voltage of 4 V, enabling fast switching essential for modern power management systems.
The device functions reliably over a broad temperature range from -55°C minimum to 150°C maximum operating temperature. It includes forward voltage of -1.2 V and gate source voltage limits from -20 V to +20 V to protect from gate damage. The compact and industry-standard SOT-23 package measures 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height for easy PCB mounting.
Compliant with IEC 61249-2-21 standards, this Vishay MOSFET is suited for a variety of industrial and commercial electronic applications, including power management, amplification, and signal switching within circuits for telecommunications, automotive electronics, and consumer devices.
The 3-pin configuration simplifies integration, making the SI2303CDS-T1-GE3 a versatile component for electronic design engineers seeking a reliable P-Channel MOSFET. Its combination of TrenchFET technology and robust electrical characteristics enables efficient performance with durability in demanding industrial environments.
Utilizes TrenchFET technology for efficient low resistance operation. 3-pin SOT-23 package for compact surface mounting. Supports 2.7 A continuous drain current at 30 V drain source voltage. Low on-resistance of 0.33 ohms reduces conduction power loss.
Wide operating temperature range (-55°C to 150°C) for reliability. Gate charge and voltage ratings enable effective switching control. IEC 61249-2-21 standard compliance ensures quality manufacturing. Ideal for industrial, electronic, automotive, and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.7 A.
It can handle a maximum drain source voltage of 30 V.
This MOSFET comes in a SOT-23 package with dimensions of 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum power dissipation rating is 1 watt.
The typical gate charge is 4 nC at a gate-source voltage of 4 V.
The operating temperature range is from -55°C to 150°C.
The maximum drain source resistance is 0.33 ohms.
The gate source voltage limits are from -20 V to +20 V.
It complies with IEC 61249-2-21 standards.
This model features an enhancement mode P-channel type channel.
The SOT-23 package has 3 pins.
This model is suitable for power management, amplification, and signal switching in various electronic applications.
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