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DiodesZetex N-Channel MOSFET 1.9 A 100 V Enhancement 6-Pin SOT-23 ZXMN10A08E6TA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.3mm
Length 3mm
Model ZXMN10A08E6TA
Width 1.75mm
Mount Type Surface
Series ZXMN10A08E6
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.9A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 300mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.7W
Typical Gate Charge Qg @ Vgs 4.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 870mV

Key Features

  • Operates efficiently with an enhancement mode channel.
  • Maximum drain source resistance of 300 milliohms ensures low energy loss.
  • Supports maximum gate source voltages of -20 V to +20 V for reliable control.
  • Typical gate charge of 4.2 nC at gate-source voltage optimizes switching performance.
  • Maximum power dissipation rating of 1.7 W for stable operation.
  • Thermal range supports operation from -55°C to 150°C.
  • Automotive grade AEC-Q101 certification ensures quality and reliability.
  • Surface mount package improves assembly efficiency in electronics manufacturing.

Product Description

DiodesZetex ZXMN10A08E6TA is an N-Channel enhancement mode MOSFET designed for efficient switching and amplification applications. It supports a maximum continuous drain current of 1.9 A and can handle voltages up to 100 V, making it suitable for low to medium power electronic circuits.

This device is housed in a 6-pin SOT-23 surface mount package, providing a compact footprint ideal for space-constrained PCB layouts. The low maximum drain source resistance of 300 milliohms minimizes conduction losses and improves performance in power switching roles.

With a maximum gate-source voltage range of -20 to +20 V and a typical gate charge of 4.2 nC, it features optimized gate drive characteristics for fast switching.

The MOSFET supports a maximum power dissipation of 1.7 W and is rated for operation in extreme temperature conditions from -55°C to 150°C, suitable for industrial and automotive environments.

Its automotive standard compliance with AEC-Q101 reinforces its reliability in demanding applications such as automotive electronics, industrial control systems, and power management.

Enhancement mode N-channel MOSFET with 1.9 A continuous drain current. 100 V maximum drain-source voltage tolerance. 6-pin SOT-23 compact surface mount package. Low drain-source resistance to reduce power losses. Wide operating temperature range from -55°C to 150°C.

Typical gate charge of 4.2 nC for efficient switching. Maximum power dissipation rating of 1.7 W. Automotive grade AEC-Q101 certification for quality assurance. Suitable for industrial, automotive, and electronic applications.

The DiodesZetex ZXMN10A08E6TA N-Channel MOSFET is a reliable component for power switching, amplification, and circuit protection within power electronics, automotive controls, industrial automation, and consumer electronics.

Explore more semiconductor and MOSFET components in the Electronics & Electricals category at EnvMart for your design and manufacturing needs.

DiodesZetex N-Channel MOSFET 1.9 A 100 V Enhancement 6-Pin SOT-23 ZXMN10A08E6TA
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Frequently Asked Questions

The maximum continuous drain current for the ZXMN10A08E6TA is 1.9 A.

It can handle a maximum drain-source voltage of 100 V.

This model comes in a 6-pin SOT-23 surface mount package.

The maximum power dissipation rating is 1.7 W.

The typical gate charge at gate-source voltage is 4.2 nC.

It supports an operating temperature range from -55°C to 150°C.

The maximum gate-source voltage is -20 V to +20 V.

The maximum drain-source resistance is 300 milliohms.

It complies with the AEC-Q101 automotive standard.

The dimensions are 3 mm in length, 1.75 mm in width, and 1.3 mm in height.

This model is an N-channel enhancement mode MOSFET.

It is suitable for power switching, amplification, and circuit protection in power electronics, automotive controls, and industrial automation.

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