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DiodesZetex N-Channel MOSFET 20 V, 4.9 A, Enhancement Mode, 3-Pin SOT-23 ZXMN2F30FHTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.12mm
Length 3.04mm
Model ZXMN2F30FHTA
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 4.9A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 65mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.4W
Typical Gate Charge Qg @ Vgs 4.8nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 750mV

Key Features

  • Supports a maximum continuous drain current of 4.9 amperes.
  • Maximum drain-source voltage rating of 20 volts.
  • Low on-resistance of 65 milliohms for efficient operation.
  • Enhancement mode channel configuration for improved switching.
  • Surface mount package type SOT-23 with 3 pins.
  • Maximum power dissipation of 1.4 watts enables moderate power applications.
  • Operating temperature range from -55° to 150° Celsius.
  • Typical gate charge of 4.8 nanocoulombs at rated gate voltage.

Product Description

DiodesZetex ZXMN2F30FHTA is a high-performance N-Channel MOSFET transistor designed for efficient switching and amplification applications in electronic circuits. Operating with a maximum continuous drain current of 4.9 A and a maximum drain-source voltage of 20 V, this enhancement mode MOSFET provides reliable performance within its rated limits. Packaged in a compact 3-pin SOT-23 surface mount format, it is suited for space-constrained designs.

Featuring a low maximum drain-source resistance (Rds) of 65 mΩ, this MOSFET ensures minimal conduction losses. The forward voltage is rated at 750 mV, supporting fast switching and efficient power handling. It has an enhanced gate structure with a maximum gate-source voltage tolerance of -12 V to +12 V, and a typical gate charge of 4.8 nC, which contributes to its fast switching speed and low power loss during transitions.

The transistor supports a continuous operating temperature range from -55°C up to 150°C, enabling use in a variety of industrial, automotive, and consumer electronic applications. Its maximum power dissipation rating of 1.4 W ensures effective handling of moderate power in switching circuits.

This device finds applications in power management systems, DC-DC converters, motor control, and low voltage load switching. It is ideal for integration into surface mount PCB designs where compactness and performance are critical.

Supports a maximum continuous drain current of 4.9 amperes. Maximum drain-source voltage rating of 20 volts. Low drain-source resistance of 65 milliohms for efficient conduction. Enhancement mode channel type for switching efficacy.

Surface mount SOT-23 package with 3 pins for compact integration. Power dissipation rating of 1.4 watts for moderate power handling. Operating temperature range from -55 to 150 degrees Celsius. Typical gate charge of 4.8 nanocoulombs supports fast switching.

Forward voltage of 750 millivolts. Compact dimensions allow space saving in PCB layouts. Use EnvMart's Electronics & Electricals category to explore more semiconductor components, including MOSFETs, to fulfill your circuit design and manufacturing needs.

DiodesZetex N-Channel MOSFET 20 V, 4.9 A, Enhancement Mode, 3-Pin SOT-23 ZXMN2F30FHTA
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.9 amperes.

This MOSFET has a maximum drain-source voltage rating of 20 volts.

It features a low maximum drain-source resistance of 65 milliohms, which ensures efficient conduction.

The operating temperature range for this unit is from -55°C to 150°C.

This model is packaged in a compact 3-pin SOT-23 surface mount format.

The typical gate charge at rated gate voltage is 4.8 nanocoulombs.

The forward voltage is rated at 750 millivolts.

This device is suitable for applications in power management systems, DC-DC converters, motor control, and low voltage load switching.

The maximum power dissipation rating for this unit is 1.4 watts.

This MOSFET has a height of 1.12 mm and a width of 1.4 mm.

The maximum gate-source voltage tolerance for this model is -12 V to +12 V.

This model features an enhancement mode N-channel configuration.

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