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DiodesZetex P-Channel Enhancement MOSFET, 3.7 A Drain Current, 70 V Drain Source Voltage, 4-Pin SOT-223 ZXMP7A17GTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.8mm
Length 6.7mm
Model ZXMP7A17GTA
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 3.7A
Maximum Drain Source Voltage Vds 70V
Maximum Drain Source Resistance Rds 250mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.9W
Typical Gate Charge Qg @ Vgs 18nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.85V

Key Features

  • This MOSFET is built with an enhancement-type P-channel architecture suitable for high-efficiency switching applications.
  • Maximum power dissipation of 3.9 W ensures reliable operation under typical load conditions.
  • Features a low maximum drain-source resistance of 250 mΩ to minimize conduction losses.
  • Operates within a wide temperature range from -55°C to 150°C, supporting harsh environments.
  • The device includes built-in automotive-grade compliance with AEC-Q101 standard.
  • Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height enable space-saving PCB designs.
  • Typical gate charge of 18 nC facilitates fast switching speeds and reduced switching losses.

Product Description

DiodesZetex ZXMP7A17GTA is a P-Channel enhancement MOSFET designed for power switching applications requiring continuous drain current of 3.7 A and a maximum drain-source voltage of 70 V. It is housed in a compact 4-pin SOT-223 surface-mount package which optimizes board space in high-density PCB layouts.

The component features a low on-resistance of 250 mΩ, ensuring minimal conduction losses and efficient operation in electronic circuits. Its maximum power dissipation rating of 3.9 W allows for sustained performance under load without thermal issues. The typical gate charge of 18 nC enables rapid switching, reducing overall switching losses in circuits.

This MOSFET operates within a broad temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronics applications. Furthermore, the device complies with AEC-Q101 automotive standards, reflecting its reliability for automotive systems and harsh environments.

Its electrical characteristics include a gate-source voltage rating of -20 V to +20 V and a forward voltage of -0.85 V, expanding application versatility. The compact physical dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height contribute to easy integration.

This MOSFET improves switching efficiency in power management systems. It supports applications in automotive electronics, industrial control, and consumer devices. The surface-mount SOT-223 package facilitates automated PCB assembly processes.

Enhanced robustness due to automotive-grade testing and certifications. Optimized for low power dissipation and fast switching performance.

This product is ideal for engineers and designers seeking a reliable P-Channel MOSFET for medium power applications. Browse the Electronics & Electricals Section in EnvMart for more semiconductor components and MOSFETs from leading brands.

DiodesZetex P-Channel Enhancement MOSFET, 3.7 A Drain Current, 70 V Drain Source Voltage, 4-Pin SOT-223 ZXMP7A17GTA
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Frequently Asked Questions

The maximum continuous drain current of this MOSFET is 3.7 A.

The maximum drain-source voltage for this model is 70 V.

The typical gate charge is 18 nC, which facilitates fast switching speeds.

The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.

The maximum power dissipation rating is 3.9 W, allowing for reliable operation under typical load conditions.

It operates within a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage is rated at -20 V to +20 V.

This device complies with the AEC-Q101 automotive standard, ensuring reliability for automotive applications.

The maximum drain-source resistance is 250 mΩ, which minimizes conduction losses.

This model uses a surface mount type, specifically in a SOT-223 package.

This MOSFET is suitable for automotive electronics, industrial control, and consumer devices.

This MOSFET has a pin count of 4.

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