STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 800V 2.5A Enhancement Mode 3-Pin IPAK STD3NK80Z-1

STMicroelectronics STD3NK80Z-1 is a high-performance N-Channel MOSFET featuring the MDmesh SuperMESH technology, designed for power switching applications requiring reliable operation at 800 V and 2.5 A current capacity. It operates in enhancement mode and comes in a compact 3-pin IPAK through-hole package.

With a maximum drain-source voltage (Vds) of 800 V, it is suitable for industrial power control and electronic component designs. Its maximum continuous drain current of 2.5 A ensures stable power handling.

The device features a low maximum drain-source resistance (Rds) of 4.5 Ω, which reduces conduction losses and improves efficiency in power management circuits. The typical gate charge (Qg) is 19 nC, which contributes to efficient switching performance and reduced power dissipation during operation.

Rated for maximum power dissipation of 70 W and operating temperature range from -55°C to 150°C, this MOSFET is engineered to withstand demanding thermal and electrical environments typical in industrial, electronic, and power converter applications.

Additional characteristics include a maximum gate-source voltage tolerance of ±30 V and a forward voltage drop (Vf) of 1.6 V, enhancing switching reliability and performance.

The dimensions of 6.6 mm length, 6.2 mm height, and 2.4 mm width ensure suitability for compact PCB layouts while providing robust through-hole mounting. The component does not carry specific automotive or industry certifications, aligning with general industrial electrical component standards.

This MOSFET operates with a maximum drain-source voltage of 800 V. It supports a maximum continuous drain current of 2.5 A. The device features a low drain-source resistance of 4.5 Ω enhancing efficiency. The typical gate charge is 19 nC at Vgs, optimizing switching performance.

Maximum power dissipation is rated at 70 W for robust thermal handling. The component supports operating temperatures from -55°C to 150°C. It is housed in a through-hole 3-pin IPAK package with compact dimensions. Maximum gate-source voltage withstands ±30 V for reliability.

Forward voltage drop is specified at 1.6 V. Widely used in electronic, power management, and semiconductor applications.

The STMicroelectronics STD3NK80Z-1 MOSFET is commonly employed in industrial power control, power converters, and electronic circuits requiring efficient switching with high voltage and current ratings. Its robust design and thermal characteristics make it ideal for use in power supplies, motor drives, and other power electronics. Explore more semiconductor and MOSFET selections in the Electronics & Electricals category at EnvMart.