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Toshiba P-Channel MOSFET, 18 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SOP Surface Mount TPC8117(TE12L,Q)

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Toshiba P-Channel MOSFET, 18 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SOP Surface Mount TPC8117(TE12L,Q)

Name: Toshiba P-Channel MOSFET, 18 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SOP Surface Mount TPC8117(TE12L,Q)
Brand: Toshiba
SKU: 126425
Price: 1.96 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	1.5mm
Length	6mm
Model	TPC8117(TE12L,Q)
Width	4.9mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOP
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	18A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.9W
Typical Gate Charge Qg @ Vgs	130nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.5V

Key Features

Implements enhancement mode channel type allowing precise switching control.
Maximum continuous drain current rating of 18 A supports high power operations.
Maximum drain-source voltage rated at 30 V ensures device stability under load.
Compact SOP 8-pin package with dimensions 6mm x 4.9mm x 1.5mm suitable for PCB surface mounting.
Maximum drain-source resistance of 4 milliohms (mΩ) minimizes conduction losses.
Typical gate charge of 130 nC at Vgs supports efficient gate drive performance.
Wide operating temperature range from -55°C to 150°C for reliable industrial use.
Forward voltage of 1.5 V and maximum power dissipation of 1.9 W enable efficient power handling.

Product Description

Toshiba TPC8117(TE12L,Q) P-Channel MOSFET is engineered for robust power applications requiring a continuous drain current of 18 A and maximum drain-source voltage of 30 V. Packaged in an industry-standard 8-pin SOP surface-mount package measuring 6 mm in length, 4.9 mm width, and 1.5 mm height, the device integrates easily into compact electronic assemblies.

This MOSFET operates in enhancement mode with a very low 4 mΩ maximum drain-source resistance, which reduces power losses during conduction. The typical gate charge is 130 nC at a gate-source voltage of ±20 V, providing swift switching capability suitable for power control circuits.

Designed to endure harsh environmental conditions, the TPC8117 supports a minimum operating temperature of -55°C and can reliably operate up to 150°C, making it well-suited for automotive, industrial, and consumer electronics applications. The device has no automotive standard certification but is quality assured by its Japanese manufacturing origin.

Additional technical specifications such as forward voltage (1.5 V) and power dissipation (1.9 W) ensure that this MOSFET can handle typical power demands efficiently. The surface mount package facilitates easy integration into printed circuit boards for electronic device fabrication and repair.

Implements enhancement mode type P-Channel MOSFET technology. Low Rds(on) for reduced losses and enhanced thermal management. Surface mount 8-pin SOP package designed for space-saving electronic designs. Wide operating temperature range for diverse application environments.

This Toshiba P-Channel MOSFET is applicable in industrial electronics, power management, signal switching, and related semiconductor device assemblies. Browse more semiconductor components and MOSFETs in EnvMart's extensive electronics catalog for complementary devices.