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onsemi PowerTrench Type P-Channel MOSFET, 2.4 A Continuous Drain Current, 20 V Drain Source Voltage, Enhancement FDN302P

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onsemi PowerTrench Type P-Channel MOSFET, 2.4 A Continuous Drain Current, 20 V Drain Source Voltage, Enhancement FDN302P

Name: onsemi PowerTrench Type P-Channel MOSFET, 2.4 A Continuous Drain Current, 20 V Drain Source Voltage, Enhancement FDN302P
Brand: onsemi
SKU: 125850
Price: 0.21 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	940μm
Length	2.92mm
Model	FDN302P
Width	1.4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	2.4A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	55mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	9nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	-1.2V

Key Features

This MOSFET features a low gate charge for fast switching.
It uses a shielded-gate structure to reduce Figure of Merit (FOM) for improved performance.
The package type is compact 3-Pin SOT-23 suitable for surface mounting.
Operating temperature ranges from -55°C to 150°C for reliability in various conditions.
The device exhibits a maximum power dissipation of 500 mW for stable operation.
A soft body diode eliminates the need for additional snubber circuits.
Enhancement mode channel ensures low on-resistance at 55 milliohms Rds.
Maximum gate source voltage tolerance of ±12 V enhances robustness in circuits.

Product Description

onsemi FDN302P PowerTrench Type P-Channel MOSFET is a compact, highly efficient power transistor optimized for switching and power density in electronic systems. It supports a maximum continuous drain current of 2.4 A and withstands a drain-source voltage of up to 20 V, making it suitable for low-voltage power switching applications.

The device employs advanced PowerTrench technology with a shielded-gate structure that balances charge and significantly lowers the Figure of Merit (FOM). This enhances switching performance in synchronous rectification circuits used in AC/DC power supplies, contributing to increased system efficiency.

Packaged in a 3-pin SOT-23 surface mount package, the FDN302P device is small in size (length 2.92 mm, width 1.4 mm, height 940 μm) and supports compact circuit designs for modern electronic products.

Operating reliably in a temperature range from -55°C to 150°C, this MOSFET accommodates harsh industrial, automotive, and commercial operating environments.

With a low typical gate charge of 9 nC at Vgs, the device supports fast switching speeds and efficient power conversion. Its soft reverse recovery body diode eliminates the need for snubber circuits or usage of higher voltage MOSFETs, simplifying design and improving reliability.

The maximum on-resistance Rds(on) is 55 mΩ, ensuring minimal power loss and heat generation when conducting. The maximum allowable gate-source voltage is ±12 V, protecting the device from voltage stress during operation.

This MOSFET provides low gate charge and soft body diode for efficient and reliable operation. Compact SOT-23 package facilitates surface mounting in space-constrained designs. Temperature range from -55°C to 150°C allows use in demanding environments.

Maximum power dissipation of 500 mW supports stable performance under load. Ideal for use in industrial, commercial, automotive, and power supply applications.

This product joins a portfolio of MOSFETs from onsemi, renowned for robust industrial components. Find more semiconductor solutions in the Electronics & Electricals category on EnvMart to meet diverse application needs.