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DiodesZetex N-Channel Enhancement MOSFET 3-Pin SOT-23, 150 mA, 60 V VN10LFTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | VN10LFTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 150mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Enhancement mode channel ensures efficient switching performance.
- Maximum continuous drain current of 150 mA suitable for low-current switching applications.
- Compact SOT-23 package with 3 pins enables surface mount technology.
- Maximum power dissipation is 330 mW, providing heat tolerance in compact applications.
- Wide operating temperature range from -55°C to 150°C for reliable performance in diverse environments.
- Maximum gate-source voltage of ±20 V tolerates standard gate driving voltages.
- Low maximum drain-source resistance of 5 Ω ensures minimal conduction losses.
- Designed without automotive or industry standard approvals, ideal for general purpose electronics.
Product Description
DiodesZetex VN10LFTA is a high-quality N-Channel Enhancement MOSFET designed for switching and amplification in electronic circuits. Housed in a compact 3-pin SOT-23 surface-mount package, it offers a maximum continuous drain current of 150 mA and supports voltages up to 60 V, making it ideal for low-power applications where space is limited.
The device features an enhancement mode channel for efficient switching operations and a low maximum on-resistance of 5 Ω. It supports wide temperature ranges, operating reliably between -55°C and 150°C, ensuring robust performance across industrial, automotive, and commercial electronics.
With a maximum power dissipation of 330 mW, the VN10LFTA MOSFET manages thermal loads effectively in compact form factors. The gate-source voltage rating of ±20 V provides ample margin for standard gate drive voltages, increasing the flexibility of its control circuits.
This MOSFET is widely utilized in power management, signal switching, and low voltage applications within industrial, manufacturing, and electronic equipment environments. It is optimized for surface mount assembly, enhancing PCB design by reducing size and improving thermal performance.
Enhancement mode N-Channel MOSFET for precise switching. Rated for 150 mA continuous drain current at 60 V voltage. Compact 3-Pin SOT-23 surface mount package. Operating temperature from -55°C to 150°C ensures durability.
Maximum power dissipation of 330 mW supports efficient heat handling. ±20 V gate-source voltage rating supports flexibility in gate control.
The product is suitable for applications in electronics manufacturing, industrial equipment design, and automotive electronics where robust small-signal switching capabilities are required. Select DiodesZetex VN10LFTA for reliable performance in surface mount semiconductor applications. Explore more semiconductor products in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The VN10LFTA has a maximum continuous drain current of 150 mA, making it suitable for low-current switching applications.
This model supports a maximum drain-source voltage of 60 V, which is suitable for various low-power applications.
It is housed in a compact SOT-23 package, which is designed for surface mount technology.
The VN10LFTA can dissipate a maximum power of 330 mW, allowing it to handle thermal loads effectively in compact applications.
It operates reliably within a wide temperature range from -55°C to 150°C, ensuring performance in diverse environments.
The maximum gate-source voltage rating is ±20 V, which accommodates standard gate driving voltages.
The VN10LFTA features a low maximum drain-source resistance of 5 Ω, which helps minimize conduction losses.
This model has 3 pins, consistent with its SOT-23 package design.
It is an N-Channel Enhancement MOSFET, designed for efficient switching operations.
The dimensions are 3.05 mm in length, 1.4 mm in width, and 1 mm in height.
The VN10LFTA is manufactured in India.
It is suitable for applications in power management, signal switching, and low voltage applications within industrial and electronic equipment environments.
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