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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.11mm |
| Length | 3.04mm |
| Model | MMBT5551LT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | MMBT5551 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 160V |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 180V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 300mW |
| Maximum DC Collector Current Idc | 600mA |
| Transistor Configuration | Single |
| NPN transistor,SMBT2222A 0.6A Ic 10VceBrand | Infineon |
| NPN transistor,MMBT5551 0.6A Ic 5VceBrand | ON Semiconductor |
onsemi MMBT5551LT1G is a small signal NPN bipolar transistor designed for medium power and medium voltage applications. Rated for a maximum DC collector current of 600 mA and maximum collector-emitter voltage of 160 V, this transistor is housed in a compact 3-pin SOT-23 surface mount package, making it suitable for modern electronic circuit boards with space constraints.
This transistor provides reliable performance over a broad temperature range from -55°C to 150°C, and is capable of dissipating up to 300 mW of power which is ideal for signal amplification and switching applications in industrial, automotive, and consumer electronics.
Its minimum DC current gain (hFE) of 20 ensures adequate amplification for small signals, while the maximum emitter-base voltage of 6 V and collector-base voltage of 180 V provide robust electrical isolation and stability.
The MMBT5551LT1G is automotive standard compliant (AEC-Q101), which certifies its suitability in rigorous automotive and industrial environments requiring high reliability components.
Measuring 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height, the SOT-23 package is optimized for surface mounting, supporting automated high-volume PCB assembly processes. Maximum DC collector current of 600 mA. Maximum collector-emitter voltage of 160 V.
Surface mount SOT-23 package with 3 pins. NPN transistor configuration with gain of minimum 20. Operating temperature range: -55°C to 150°C. Power dissipation up to 300 mW. Automotive standard AEC-Q101 qualified. Compact dimensions for space-limited applications.
The onsemi MMBT5551LT1G transistor is widely used in industrial electronics, automotive systems, communications equipment, and general-purpose switching circuits. Its small size and robust specifications make it a versatile choice for signal amplification and switching tasks in demanding conditions.
Explore the Bipolar Transistors category on EnvMart for more premium quality semiconductor devices from leading brands like onsemi.
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