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Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 82 W Power Dissipation, 3-Pin TO-220 IRF630NPBF

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Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 82 W Power Dissipation, 3-Pin TO-220 IRF630NPBF

Name: Infineon HEXFET N-Channel MOSFET, 9.3 A, 200 V, 82 W Power Dissipation, 3-Pin TO-220 IRF630NPBF
Brand: Infineon
SKU: 123453
Price: 0.74 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	8.77mm
Length	10.54mm
Model	IRF630NPBF
Width	4.69mm
Mount Type	Through Hole
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	9.3A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	300mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	82W
Typical Gate Charge Qg @ Vgs	35nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V
N-channel MOSFET,IRF630N 8.1A 250VBrand	International Rectifier

Key Features

Designed for high-performance electronic and automation systems.
Features HEXFET technology for efficient power handling.
TO-220 package ensures reliable through-hole mounting.
Fast switching speeds optimize power management in dynamic applications.
Fully avalanche rated for rugged industrial use.
Maximum gate-source voltage ±20 V enables versatile circuit design compatibility.
Typical gate charge of 35 nC reduces switching losses.
Operating temperature range from -55°C to 175°C for durability.

Product Description

Infineon IRF630NPBF HEXFET N-Channel MOSFET is engineered for robust performance in demanding industrial, automation, and electronics sectors. This device supports a maximum continuous drain current of 9.3 A and a drain-source voltage rating of 200 V, delivering reliable operation in power-intensive applications.

The TO-220 package design facilitates effective through-hole mounting with superior thermal management. Offering a maximum power dissipation of 82 W, it ensures efficient heat handling under high load conditions. Fast switching speeds contribute to improved overall system efficiency, ideal for switching power supplies, motor drivers, and DC-DC converters.

With a typical gate charge of 35 nC and a maximum gate-source voltage of ±20 V, it provides simple drive requirements and compatibility with diverse circuit architectures. This MOSFET is fully avalanche rated making it suitable for rugged environments and industrial power applications.

This component is suitable for controlling compressor motors in HVAC systems, managing power in renewable energy installations, and stabilizing voltage in industrial power supplies. It supports a wide operating temperature range from -55°C to 175°C ensuring reliability in extreme conditions.

High power rating supports extensive electrical applications. Efficient HEXFET technology lowers thermal resistance for effective cooling. Fast switching speeds improve performance in dynamic systems. Simple drive requirements aid seamless circuit integration.

Fully avalanche rated for rugged and reliable operation. Extended operating temperature range enhances device durability. Suitable for motor control and power management circuits. Compact and robust TO-220 through-hole mounting package.

Applicable in renewable energy system power efficiency. Stable performance in HVAC compressor motor control.

Choose Infineon IRF630NPBF for dependable MOSFET performance in industrial, laboratory, HVAC, electronic power circuits, and manufacturing environments. Explore more semiconductor components from Infineon on EnvMart for industrial and commercial electronic solutions.