Vishay P-Channel Power MOSFET TO-220AB Package 3-Pin -6.7 A Continuous Drain Current -60 V Drain Source Voltage IRF9Z14PBF

The Vishay IRF9Z14PBF is a P-Channel Power MOSFET ideally suited for medium-power electronic switching and amplification tasks. It features a maximum continuous drain current of -6.7 A and a drain-source voltage rating of -60 V. Packaged in a TO-220AB with three pins, this device supports through-hole mounting that provides robust mechanical and thermal integration into electronic assemblies.

Designed with enhancement mode and type P channel architecture, the IRF9Z14PBF offers reliable high-side switching capabilities. Its maximum power dissipation of 43 Watts allows it to handle substantial thermal loads while operating efficiently, aided by a low on-resistance (RDS(on)) of 500 mΩ that reduces conduction losses.

The transistor operates over an extended temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and commercial electronics where high reliability under variable thermal conditions is critical. A typical gate charge of 12 nC minimizes switching losses and energy consumption, enhancing performance in power-sensitive applications.

The device's gate voltage range of ±20 V requires careful driver circuitry design attention to prevent damage while providing robust control. The 3-pin TO-220AB package allows for easy heat sink attachment and durable board integration, suitable for motor driver circuits, audio amplifier power stages, and discrete power supplies.

Compliant with RoHS environmental standards, the IRF9Z14PBF contributes to environmentally responsible electronic designs. This power MOSFET is ideal for replacing or integrating into systems needing 60V P-channel devices with high-current demands.

Type P channel and enhancement mode semiconductor device ensuring reliable high-side switching performance. Packaged in a TO-220AB with three pins for robust through-hole mounting and thermal management. Maximum power dissipation of 43W enables sustained operation in thermally demanding environments.

Operating temperature range from -55°C to 175°C supports harsh industrial conditions. Low RDS(on) of 500 mΩ minimizes conduction losses and improves efficiency. Typical gate charge of 12nC reduces switching energy for power-sensitive circuits.

Maximum gate-source voltage of ±20 V safeguards against gate damage in switching applications. Suitable for audio amplifier switching, motor driver circuits, and power supply high-side switching. Compliant with RoHS directive for environmental safety and standards conformity.

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