Nexperia High Voltage PNP Bipolar Transistor BF821,215, -50 mA, -300 V, SOT-23 Package BF821,215

Nexperia BF821,215 is a high voltage PNP bipolar transistor designed for use in electronic circuits requiring reliable switching and amplification. It supports a maximum DC collector current of -50 mA and a maximum collector-emitter voltage of -300 V. Packaged in a compact 3-pin SOT-23 surface mount package, this transistor is suitable for space-constrained applications.

With a maximum power dissipation of 250 mW and a minimum DC current gain (hFE) of 50, it delivers efficient performance in amplifying signals. The device operates reliably over a temperature range from -65°C to 150°C, making it suitable for industrial and automotive environments.

The transistor features a maximum transition frequency of 60 MHz, permitting fast switching speeds essential in communication and power management applications. Compliance with RoHS ensures environmentally friendly manufacturing, and the AEC-Q101 automotive standard confirms its quality and robustness in automotive electronics.

Nexperia BF821,215 is ideal for industrial electronics, power switching, signal amplification, and automotive electronics applications. Its surface mount design allows for easy integration on modern printed circuit boards.

Compact SOT-23 3-pin package for surface mounting. High voltage capability with 300 V collector-emitter and 300 V collector-base rating. Robust operation under high power dissipation conditions with 250 mW rating. Wide temperature range for versatile environmental use.

Fast switching with 60 MHz frequency rating. RoHS compliant and automotive standard AEC-Q101 certified. Explore more Bipolar Transistors and discrete semiconductor components at EnvMart for your industrial and electronic design needs.