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STMicroelectronics STripFET N-Channel MOSFET, 50 A, 100 V Enhancement Mode, TO-220 Package STP40NF10
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP40NF10 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 46.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features an enhancement mode channel for reliable switching applications.
- Maximum drain source resistance is 28 milliohms, ensuring efficient power conduction.
- Capable of dissipating up to 150 watts power, suitable for high power electronic circuits.
- Operates within a temperature range from -55°C to 175°C, ideal for demanding environments.
- Typical gate charge of 46.5 nanocoulombs enables fast switching performance.
- Maximum gate source voltage range is from -20 V to +20 V for stable operation.
- The compact TO-220 package provides through-hole mounting convenience.
- Designed without specific automotive standards and approvals, but compliant with industry norms.
Product Description
STMicroelectronics STP40NF10 is a high-performance N-Channel STripFET™ MOSFET designed for electronic power switching and control applications. Featuring a maximum continuous drain current of 50 A and a drain-source voltage rating of 100 V, this device operates reliably in enhancement mode. Packaged in a compact TO-220 3-pin through-hole form factor, it offers ease of integration into various industrial and commercial electronic systems.
The maximum drain source resistance of 28 milliohms ensures efficient conduction and low power loss, while a maximum power dissipation of 150 W accommodates demanding operational loads. The MOSFET supports a wide operating temperature range from -55°C up to 175°C, suitable for harsh environmental conditions commonly encountered in industrial, manufacturing, and automotive electronic applications.
The device exhibits a typical gate charge of 46.5 nC at the specified gate voltage, facilitating fast switching speeds and enhanced circuit responsiveness. It is rated for a maximum gate-source voltage between -20 and +20 volts, offering robust gate control and stability.
The TO-220 package dimensions - 10.4 mm length, 9.15 mm height, and 4.6 mm width - provide a balanced footprint suitable for optimized PCB layouts and effective thermal management. Although it is not certified for automotive standards, this MOSFET is widely used in electronics, power supply designs, motor drivers, and power conversion systems.
This MOSFET features an enhancement mode N-channel type. Maximum continuous drain current of 50 amperes. Withstands drain-source voltage up to 100 volts. Through-hole mounting with TO-220 package for reliable installation.
Low drain-source resistance of 28 milliohms allows efficient power flow. High power dissipation rating of 150 watts for heat tolerance. Operating temperature range from -55°C to 175°C for durability. Typical gate charge value of 46.5 nanocoulombs for fast switching.
Maximum gate-source voltage limits at -20 V to +20 V ensure gate reliability.
This STMicroelectronics STripFET MOSFET is ideal for use in industrial electronics, power management, consumer electronics, and various embedded control systems. It supports applications requiring high current and voltage switching capabilities, providing both durability and efficient performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
It can dissipate up to 150 watts of power, making it suitable for high power electronic circuits.
The typical gate charge is 46.5 nanocoulombs, which facilitates fast switching performance.
It operates within a temperature range of -55°C to 175°C.
This model is packaged in a TO-220 form factor, which allows for through-hole mounting.
The maximum drain source resistance is 28 milliohms, ensuring efficient power conduction.
The maximum gate-source voltage range is from -20 V to +20 V, providing stable operation.
This model features a 3-pin configuration.
It features an enhancement mode N-channel type.
The forward voltage rating for this model is 1.5 V.
The country of origin for this MOSFET is India.
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