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Toshiba STripFET II N-Channel MOSFET, 55 A, 60 V Enhancement, 3-Pin TO-220 STP55NF06L
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP55NF06L |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 95W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
| Forward Voltage Vf | 1.6V |
| Toshiba TK N-Channel MOSFET, 55 A, 80 V Enhancement, 3-Pin TO-220 TK35E08N1Brand | Toshiba |
Key Features
- This MOSFET features low on-resistance and ultra-low gate charge for efficient switching performance.
- Designed for enhancement mode operation with 3 pins in through-hole mount type.
- Maximum power dissipation is 95 W, suitable for high power applications.
- Wide operating temperature range from -55°C to 175°C ensures reliable performance under harsh conditions.
- The device has a typical gate charge of 27 nC at Vgs, enabling fast switching speeds.
- Forward voltage drop of 1.6 V minimizes power loss during conduction phases.
- Compact dimensions of 10.4 mm length, 9.15 mm height, and 4.6 mm width fit standard electronic assemblies.
- Manufactured in China with no automotive standard compliance.
Product Description
STMicroelectronics STP55NF06L is a high-performance STripFET II N-Channel MOSFET housed in a 3-pin TO-220 through-hole package. It supports a maximum continuous drain current of 55 A and a drain-source voltage rating of 60 V, making it suitable for power switching and amplification in electronic and industrial control applications.
The device features an enhancement mode channel with ultra-low gate charge of 27 nC at Vgs, providing efficient switching and low switching losses which are critical in power management systems. Its low drain-source on-resistance of 18 mΩ optimizes conduction efficiency, while the forward voltage drop of 1.6 V contributes to reduced power dissipation.
Designed to operate reliably across a broad temperature range from -55°C up to 175°C, this MOSFET meets the demands of industrial environments, power supplies, motor control circuits, and other high-power electronic applications.
The compact dimensions (10.4 mm long, 9.15 mm high, and 4.6 mm wide) in a standard TO-220 form factor facilitate easy integration into PCB layouts with through-hole mounting. With a maximum power dissipation rating of 95 W, this transistor supports robust thermal management strategies when combined with appropriate heat sinks.
Low on-resistance and ultra-low gate charge enable efficient operation. Wide temperature range for industrial and commercial use. Compact TO-220 package with standard pin count supports easy board assembly. High power dissipation capacity suited for demanding applications.
Compatible with a range of electronic devices including power supplies and motor drives.
STMicroelectronics products are widely used in semiconductor applications where reliability and performance are critical. This MOSFET is ideal for industrial, commercial, and laboratory electronics, offering an effective solution for switching and amplification circuits.
Explore the extensive STMicroelectronics range for complementary components and optimize your power electronics design with quality assured semiconductor devices on EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The typical gate charge at Vgs for this unit is 27 nC.
The maximum power dissipation rating for this MOSFET is 95 W.
It operates reliably across a temperature range from -55°C to 175°C.
The dimensions are 10.4 mm in length, 9.15 mm in height, and 4.6 mm in width.
This model uses a through-hole mounting type.
The forward voltage drop is 1.6 V.
The maximum drain-source on-resistance is 18 mΩ.
This MOSFET has a pin count of 3.
Yes, it is designed for high power applications with its specifications supporting robust performance.
This model is manufactured in China.
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