Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon NPN Bipolar Transistor 45 mA 15 V 3-Pin SOT-23 BFR35APE6327HTSA1

Category Bipolar Transistors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1mm
Length 2.9mm
Model BFR35APE6327HTSA1
Width 1.3mm
Mount Type Surface
Series BFR35AP
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 15V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 2.5V
Maximum Collector Base Voltage VCBO 20V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 280mW
Maximum DC Collector Current Idc 45mA
Transistor Configuration Single
Maximum Transition Frequency ft 5000MHz
Infineon BFR92PE6327HTSA1 Transistor, 45 mA NPN, 15 V, 3-Pin SOT-23Brand Infineon

Key Features

  • Compact 3-pin SOT-23 package suitable for surface mounting.
  • High transition frequency of 5000 MHz for RF applications.
  • Maximum power dissipation rated at 280 mW ensures stable performance.
  • Minimum DC current gain of 70 guarantees amplification consistency.
  • Operating temperature up to 150°C supports high-temperature environments.
  • Single transistor configuration optimized for electronic circuits.
  • Complies with AEC-Q101 automotive standard for quality assurance.
  • Maximum collector-base voltage of 20 V and emitter-base voltage of 2.5 V.

Product Description

The Infineon BFR35APE6327HTSA1 is a high-performance NPN bipolar transistor tailored for applications requiring high frequency and low power dissipation. Encased in a compact 3-pin SOT-23 surface-mount package, this transistor supports a maximum collector current of 45 mA and a collector-emitter voltage of 15 V, making it suitable for use in RF amplification and switching circuits.

With a transition frequency of 5000 MHz, the transistor excels in high-frequency applications. The device delivers a reliable minimum DC current gain (hFE) of 70, which ensures consistent signal amplification across varying conditions. Power dissipation of 280 mW allows stable operation within compact circuit boards, while its ability to withstand operating temperatures up to 150°C makes it fit for demanding environments.

This transistor is designed in a single transistor configuration and meets the stringent AEC-Q101 automotive standard, certifying it for quality and reliability in automotive circuits. The mechanical dimensions are precise, with a length of 2.9 mm, width of 1.3 mm, and a height of 1 mm, allowing integration in space-constrained designs.

Its electrical limits include a maximum collector-base voltage (VCBO) of 20 V and emitter-base voltage (VEBO) of 2.5 V, providing stable operation margins. The SOT-23 package supports surface mount technology (SMT) for automated assembly lines, reducing production time and costs.

Compact 3-pin SOT-23 package for SMT applications. High-frequency performance suitable for RF circuits. Reliable operation up to 150°C for harsh environments. Maximum power dissipation of 280 mW. Meets automotive AEC-Q101 standard.

Precise physical dimensions facilitate PCB design.

This NPN bipolar transistor is ideal for industrial electronics, communication devices, automotive electronics, and other high-frequency signal amplification needs. Its proven performance and robustness make it a versatile component in the semiconductor category.

Explore more products in Bipolar Transistors category and discover additional offerings from Infineon to meet your electronic component requirements at EnvMart.

Infineon NPN Bipolar Transistor 45 mA 15 V 3-Pin SOT-23 BFR35APE6327HTSA1
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum power dissipation of the Infineon BFR35APE6327HTSA1 is rated at 280 mW.

It has a high transition frequency of 5000 MHz, making it suitable for RF applications.

The dimensions of the SOT-23 package are 2.9 mm in length, 1.3 mm in width, and 1 mm in height.

The maximum collector current for this transistor is 45 mA.

The maximum collector-emitter voltage (Vceo) is rated at 15 V.

This model complies with the AEC-Q101 automotive standard for quality assurance.

The minimum DC current gain (hFE) is guaranteed to be 70, ensuring consistent amplification.

The maximum emitter-base voltage (VEBO) is rated at 2.5 V.

The maximum collector-base voltage (VCBO) is 20 V.

It is designed in a single transistor configuration, optimized for electronic circuits.

The maximum operating temperature is up to 150°C, suitable for high-temperature environments.

This model uses a surface mount technology (SMT) for easy integration into circuit boards.

Related Products

Other Products from this brand

$0.30
$0.30 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.30
$0.30
Tax included