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Vishay 150 V 10 A Surface-Mount Schottky Barrier Schottky Diode TO-252 Package V10PWM153HM3/I
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | V10PWM153HM3/I |
| Mount Type | Surface |
| Series | eSMP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 10A |
| Peak Reverse Repetitive Voltage Vrrm | 150V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Non-Repetitive Forward Surge Current Ifsm | 180A |
| Maximum Forward Voltage Vf | 0.61V |
Key Features
- Utilizes trench MOS barrier Schottky technology for high efficiency operation.
- Compact TO-252 (D-PAK) package with low profile of approximately 1.3 mm height.
- Designed for low voltage high frequency DC/DC converters and freewheeling diode applications.
- Features low forward voltage drop of 0.61 V resulting in reduced power loss.
- Capable of withstanding peak non-repetitive forward surge current of 180 A.
- Certified RoHS compliant ensuring environmental safety.
- Automotive qualified to AEC-Q101 standard for enhanced reliability.
- Wide operating temperature range from -65°C to 150°C suitable for harsh environments.
Product Description
Vishay V10PWM153HM3/I is a high current density surface-mount Schottky Barrier Schottky diode in a TO-252 (D-PAK) package. It is engineered using trench MOS barrier Schottky technology to provide fast switching speed with low forward voltage drop, enabling efficient operation in power electronic circuits.
This diode can handle a maximum continuous forward current of 10 A and a peak reverse repetitive voltage of 150 V, making it suitable for various industrial and automotive power applications including low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection circuits.
The device offers excellent surge current capability with a peak non-repetitive forward surge current rating of 180 A, ensuring robustness under transient conditions. Its compact 1.3 mm height surface-mount TO-252 package is ideal for space-constrained designs and supports automated assembly processes.
Certified as RoHS compliant and qualified to automotive standard AEC-Q101, this diode meets stringent environmental and reliability requirements. It operates reliably across an extended temperature range from -65°C up to 150°C, suitable for demanding industrial and automotive environments.
Trench MOS Barrier Schottky technology delivers low forward voltage drop and high efficiency. Compact TO-252 surface-mount packaging for automated PCB assembly. Maximum continuous forward current: 10 A. Peak reverse repetitive voltage: 150 V.
Low forward voltage drop of 0.61 V reduces conduction losses. Peak non-repetitive surge current rating of 180 A enhances durability. RoHS compliant and AEC-Q101 automotive qualified for reliability. Wide operating temperature range from -65°C to 150°C.
This Schottky diode is suited for industrial power, automotive electronics, DC/DC conversion, manufacturing equipment, and other high-efficiency electronic circuits requiring reliable rectification performance.
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Frequently Asked Questions
The maximum continuous forward current of the Vishay V10PWM153HM3/I Schottky diode is 10 A.
This model has a peak reverse repetitive voltage rating of 150 V.
The forward voltage drop of this diode is 0.61 V, which helps reduce conduction losses.
The peak non-repetitive forward surge current rating for this diode is 180 A.
This diode operates reliably within a temperature range of -65°C to 150°C.
The Vishay V10PWM153HM3/I comes in a compact TO-252 (D-PAK) package.
Yes, this diode is certified as RoHS compliant, ensuring it meets environmental safety standards.
This model is qualified to the AEC-Q101 automotive standard for enhanced reliability.
The diode configuration of this unit is single.
This Schottky diode is suitable for low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection circuits.
It utilizes trench MOS barrier Schottky technology for high efficiency operation.
The height of the TO-252 package is approximately 1.3 mm.
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