Infineon BSZ Type N-Channel MOSFET 212 A, 40 V, 8-Pin PQFN Surface Mount BSZ024N04LS6ATMA1

Infineon BSZ024N04LS6ATMA1 is a high-performance Type N-Channel MOSFET semiconductor device designed specifically for demanding power electronic applications. Featuring a maximum continuous drain current of 212 amperes and a drain-source voltage rating of 40 volts, this device excels in high current switching and power conversion tasks. The PQFN surface mount package with 8 pins ensures optimized PCB mounting and superior heat dissipation capabilities, suitable for compact and robust industrial assemblies.

This MOSFET utilizes a silicon-based N-channel structure that minimizes conduction losses with an extremely low Rds(on) of 0.7 milliohms, resulting in enhanced efficiency for power systems. It supports sustained thermal performance with a maximum power dissipation capability of 81 watts, allowing the device to handle high load conditions reliably. Operational temperature ranges from -55°C up to 175°C enable deployment in a variety of harsh industrial environments.

The device possesses a moderate gate charge of 80 nanoCoulombs at Vgs, facilitating a balanced switching speed and gate drive effort, while the maximum gate-source voltage is limited to 20 volts to protect gate integrity. These characteristics make the MOSFET highly suitable for applications such as motor driver circuits demanding high continuous current, primary and synchronous stages of DC-DC converters, industrial drive systems, and high-current battery management electronics.

Infineon BSZ series MOSFETs meet RoHS compliance ensuring environmental and safety standards. Its 8-pin PQFN construction aids in precise PCB routing and thermal management requirements integral to modern electronics manufacturing. This device is a reliable choice for advanced power electronics in industrial, automotive (non-automotive standard in this case), and commercial system designs.

Offers low conduction losses with 0.7 mΩ Rds(on) for efficient operation. Supports heavy current loads up to 212 A continuous drain current. Features an 81 W power dissipation for effective thermal management during high loads.

Operates over a wide temperature range from -55°C to 175°C. Includes an 80 nC typical gate charge balancing switching speed and drive effort. Protected by a maximum gate-source voltage limit of 20 V for gate safety. Surface mount PQFN package enhances heat transfer and PCB layout flexibility.

Compliant with RoHS standards restricting hazardous substances. Suitable for motor drivers, DC-DC converters, battery management, and industrial drive systems.

This Infineon BSZ024N04LS6ATMA1 MOSFET represents an optimal solution for engineers designing power stages in industrial automation, power supplies, and automotive auxiliary electronics where reliable, high-current switching devices are required. Explore the complete range of MOSFET components and industrial electronics at EnvMart for your next industrial project.