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Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE065N10NM5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE065N10NM5ATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.85mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 0.73V |
Key Features
- Features low drain-source resistance of 0.85 milliohms for efficient conduction.
- Provides a maximum power dissipation of 81 watts, suitable for high power applications.
- Typical gate charge is 80 nanocoulombs at Vgs, ensuring fast switching performance.
- Supports wide operating temperature range from -55°C to 150°C.
- Designed for surface mount with 8 pins in a compact 3.3 mm length package.
- Gate-source voltage rating is ±16 volts, providing robust gate protection.
- Forward voltage is 0.73 volts, contributing to minimized losses.
- Meets RoHS compliance and automotive grade standard AEC-Q101 for reliable performance.
Product Description
Infineon IQE065N10NM5ATMA1 is a high-performance N-Channel MOSFET designed to handle a maximum continuous drain current of 253 A and a maximum drain-source voltage of 30 V. Packaged in an 8-pin PQFN format with a compact 3.3 mm length, this MOSFET provides excellent power density and reduced conduction losses due to its low drain-source resistance of 0.85 milliohms.
This device supports a maximum power dissipation of 81 watts, making it suitable for demanding industrial, automotive, and power management applications requiring high efficiency and reliable switching. Featuring a typical gate charge of 80 nC at Vgs, it enables fast switching speeds, contributing to energy efficiency in power conversion systems.
Designed for surface mount technology, the MOSFET is built to operate in extreme temperature environments ranging from -55°C up to 150°C. Its robust gate-source voltage tolerance of up to ±16 volts ensures protection against voltage spikes, while a forward voltage of 0.73 V reduces conduction losses during operation.
The IQE series device complies with RoHS standards, confirming its environmentally safe manufacture, and meets the automotive standard AEC-Q101, making it suitable for use in automotive electronics where durability and reliability are critical.
Industrial use cases include applications in power supplies, motor controls, electric vehicles, and high-performance computing devices where efficient power switching and thermal management are essential.
Features low drain-source resistance of 0.85 milliohms for efficient conduction. Provides a maximum power dissipation of 81 watts, suitable for high power applications. Typical gate charge is 80 nanocoulombs at Vgs, ensuring fast switching performance.
Supports wide operating temperature range from -55°C to 150°C. Designed for surface mount with 8 pins in a compact 3.3 mm length package. Gate-source voltage rating is ±16 volts, providing robust gate protection. Forward voltage is 0.73 volts, contributing to minimized losses.
Meets RoHS compliance and automotive grade standard AEC-Q101 for reliable performance. Explore more high quality semiconductor components and MOSFETs available at EnvMart to support your industrial and automotive applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 253 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It supports a maximum power dissipation of 81 watts, making it suitable for high power applications.
The typical gate charge at Vgs is 80 nanocoulombs (nC).
It operates within a wide temperature range from -55°C to 150°C.
The device features a low drain-source resistance of 0.85 milliohms.
This model is packaged in an 8-pin PQFN format.
It meets the automotive grade standard AEC-Q101.
The gate-source voltage rating is ±16 volts, providing robust gate protection.
The forward voltage is 0.73 volts, contributing to minimized losses during operation.
Yes, it meets RoHS compliance, confirming its environmentally safe manufacture.
It is suitable for demanding industrial, automotive, and power management applications requiring high efficiency and reliable switching.
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