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Infineon IPL Type N-Channel MOSFET 107A 700V Enhancement 5-Pin ThinPAK 8x8 IPL65R200CFD7AUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 8.1mm |
| Model | IPL65R200CFD7AUMA1 |
| Mount Type | Surface |
| Series | IPL |
| Maximum Operating Temperature | 150°C |
| Package Type | ThinPAK 8x8 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 5 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 107A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 107A ensures high power handling.
- 700V maximum drain-source voltage for robust operation in high voltage circuits.
- Enhancement mode channel type provides controlled switching performance.
- ThinPAK 8x8 surface mount package with 5 pins for compact design.
- Low drain-source resistance of 95 milliohms improves efficiency and reduces power loss.
- Typical gate charge of 80 nanocoulombs at 8V gate drive for fast switching.
- Maximum power dissipation of 81W supports high performance applications.
- Operating temperature range from -40°C to 150°C suitable for industrial environments.
Product Description
Infineon IPL65R200CFD7AUMA1 is a N-Channel MOSFET designed for high-efficiency industrial applications. It features a maximum continuous drain current of 107A and a maximum drain-source voltage of 700V, delivered in a compact 5-pin ThinPAK 8x8 surface mount package. This enhancement mode MOSFET belongs to the IPL series and is optimized for resonant topologies like those used in server power supplies, telecom equipment, solar power converters, and electric vehicle charging stations.
This device offers significantly reduced switching losses compared to earlier generations, with a typical gate charge of 80nC and low drain-source resistance of 95 milliohms, yielding improved power density and efficiency. The MOSFET can operate over a wide temperature range (-40°C to 150°C), making it suitable for demanding industrial environments. It also implements improved turn-off behavior and reduced reverse recovery charge to maximize overall system efficiency.
The IPL65R200CFD7AUMA1 complies with RoHS directives and meets the automotive standard AEC-Q101, affirming its quality and reliability for automotive and industrial use. Its forward voltage of 1V supports efficient power rectification and switching applications.
High continuous drain current of 107A supports robust power conversion. 700V drain-source voltage enables use in high-voltage industrial circuits. Compact surface mount ThinPAK 8x8 package allows space-saving PCB design.
Enhanced switching performance reduces losses and improves efficiency. Wide operating temperature range from -40°C to 150°C suits harsh environments. Certified RoHS and AEC-Q101 compliant for environmental and automotive standards.
This MOSFET is suited for industrial, automation, renewable energy, automotive, telecom, and manufacturing applications where efficiency and reliability are critical. It enables designers to achieve high power density and improved system performance in power supplies, converters, and motor drives.
Explore EnvMart's electronics and semiconductor categories for more Infineon MOSFETs and related power components designed for modern industrial technology solutions.
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Frequently Asked Questions
The maximum continuous drain current of this model is 107A, allowing for high power handling in various applications.
This MOSFET has a maximum drain-source voltage of 700V, making it suitable for high voltage circuits.
It comes in a ThinPAK 8x8 surface mount package, which allows for compact PCB design.
The operating temperature range is from -40°C to 150°C, suitable for industrial environments.
The typical gate charge at an 8V gate drive is 80 nanocoulombs, facilitating fast switching performance.
It features a low drain-source resistance of 95 milliohms, which improves efficiency and reduces power loss.
This device complies with the automotive standard AEC-Q101, ensuring its reliability for automotive applications.
The maximum power dissipation is 81W, supporting high performance applications.
The forward voltage is 1V, which supports efficient power rectification and switching applications.
The ThinPAK 8x8 package has 5 pins, which is typical for this type of MOSFET.
It is an N-Channel MOSFET, designed for enhancement mode operation, providing controlled switching performance.
The country of origin for this model is India, indicating its manufacturing location.
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