Vishay TrenchFET Gen IV Type P-Channel MOSFET 445 A 30 V Enhancement 4-Pin PowerPAK (8x8L) SQJQ130EL-T1_GE3

Vishay SQJQ130EL-T1_GE3 is a high-performance TrenchFET Gen IV Type P-Channel MOSFET designed primarily for automotive and industrial applications requiring efficient power switching and thermal robustness. This device supports a maximum continuous drain current of 445 A and a drain-source voltage of 30 V, making it suitable for high-current, low-voltage applications.

Encased in a surface mount 4-pin PowerPAK (8x8L) package with dimensions of 6.15 mm length, 4.9 mm width, and 1.6 mm height, the MOSFET provides efficient thermal dissipation and a compact footprint optimized for space-constrained PCB layouts. The device exhibits a very low on-resistance of 0.00052 Ω, minimizing conduction losses and enhancing energy efficiency during operation.

Qualified to the automotive standard AEC-Q101, the MOSFET ensures reliability under stringent environmental conditions, with an operating temperature range from -55°C up to 125°C. The typical gate charge of 43 nC aids in fast switching capabilities while maintaining control and stability in the circuit. Maximum gate-source voltage rating of 20 V guarantees safe gate drive conditions, and forward voltage of 1.1 V supports efficient conduction.

Designed with enhancement-mode channel technology, this transistor is ideal for automotive power management, industrial motor control, and power conversion applications, where performance and durability are critical. Its thin package allows integration in diverse electronic systems requiring compact power components.

This MOSFET operates at a maximum continuous drain current of 445 A. It supports a maximum drain-source voltage of 30 V suitable for high-power applications. The low drain-source resistance of 0.00052 Ω ensures efficient conduction with minimal losses.

Maximum power dissipation rating is 255 W, supporting robust thermal management. Designed with automotive-level AEC-Q101 qualification for reliability and quality. Operating temperature ranges from -55°C to a maximum of 125°C.

The typical gate charge is 43 nC at Vgs, providing excellent switching performance. It features a compact and thin PowerPAK package measuring 6.15 mm in length, 4.9 mm in width, and 1.6 mm in height. Maximum gate-source voltage is 20 V and forward voltage is 1.1 V, optimizing device control and conduction.

Its enhancement-mode channel ensures controlled conduction for precise electronic applications.

This Vishay MOSFET SQJQ130EL-T1_GE3 is widely used in industrial power electronics, automotive power systems, HVAC controllers, and manufacturing automation where reliable, high-current switching components are essential.

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