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Vishay Type N-Channel Depletion MOSFET, 48.1 A, 60 V, 8-Pin PowerPAK SO-8 SIR574DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIR574DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 48.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.01Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Channels depletion mode operation with low drain-source resistance of 0.01 Ω.
- Maximum power dissipation rating of 83 W for high efficiency.
- Operates reliably between -55°C and 125°C temperature range.
- Typical gate charge of 56 nC at Vgs ensuring fast switching.
- Protected with automotive standard AEC-Q101 for robust applications.
- Surface mount technology with compact PowerPAK SO-8 packaging.
- Maximum gate-source voltage of 20 V for enhanced control.
- Designed for power supply, motor control, and synchronous rectification uses.
Product Description
Vishay SIR574DP-T1-RE3 is a Type N-Channel Depletion MOSFET designed for industrial and automotive applications. It supports maximum continuous drain current of 48.1 A and drain-source voltage of 60 V, packed in a compact 8-Pin PowerPAK SO-8 surface mount package.
This MOSFET features a very low on-resistance of 0.01 Ω, enabling efficient power conversion and minimal energy loss. It is qualified with the AEC-Q101 automotive standard, making it suitable for automotive and harsh environment operations.
The device operates over a wide temperature range from -55°C to +125°C and has a maximum power dissipation of 83 W, supporting high power density designs. Its typical gate charge is 56 nC at the gate-source voltage, allowing fast switching speeds in power supply and motor drive control applications.
The SIR574DP-T1-RE3 is ideal for implementing power supply circuits, motor driver controls, and synchronous rectification. The surface mount PowerPAK SO-8 format ensures easy PCB assembly and high thermal performance.
Channels depletion mode operation with low drain-source resistance of 0.01 Ω. High power dissipation rating of 83 W for robust use. Wide operating temperature from -55°C to 125°C. Typical gate charge of 56 nC at Vgs. Certified to automotive AEC-Q101 standard.
8-Pin PowerPAK SO-8 surface mount package. Maximum gate-source voltage of 20 V. Designed for power supplies, motor drives, and synchronous rectification.
This product belongs to the Semiconductor category with a focus on MOSFETs, suitable for industrial, automotive, and power electronics applications. Explore the Electronics & Electricals section for related components and Vishay products for trusted semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 48.1 A.
The maximum drain-source voltage for the SIR574DP-T1-RE3 is 60 V.
The typical gate charge at Vgs for this model is 56 nC.
It has a maximum power dissipation rating of 83 W.
The operating temperature range for the SIR574DP-T1-RE3 is from -55°C to 125°C.
This model uses a PowerPAK SO-8 surface mount package.
It is qualified to the automotive standard AEC-Q101.
The maximum gate-source voltage for the SIR574DP-T1-RE3 is 20 V.
The on-resistance of the SIR574DP-T1-RE3 is 0.01 Ω.
This model has a pin count of 8.
It is designed for power supply circuits, motor driver controls, and synchronous rectification.
The SIR574DP-T1-RE3 utilizes a Type N channel in depletion mode operation.
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