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Infineon CoolMOS Type N-Channel MOSFET 25 A 700 V 3-Pin TO-247 IPW65R090CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IPW65R090CFD7XKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Maximum Power Dissipation Pd | 127W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- High maximum power dissipation of 127W suitable for industrial applications.
- Low maximum drain source resistance of 900mΩ for efficient switching.
- Operates reliably from -55°C up to 150°C ambient temperature.
- Typical gate charge of 53nC ensures fast switching performance.
- Designed for through-hole mounting in TO-247 package.
- Integrated fast body diode enhances hard-commutation ruggedness.
- Provides improved full-load and light-load efficiency in SMPS applications.
- Ideal for servers, telecom, solar, and EV charging applications.
Product Description
Infineon IPW65R090CFD7XKSA1 CoolMOS Type N-Channel MOSFET is a high-performance device designed for efficient power management in industrial and electronic systems. It features a maximum continuous drain current of 25 A and a maximum drain source voltage of 700 V, delivered in a 3-pin TO-247 through-hole package, facilitating robust and reliable installation.
The MOSFET is optimized for resonant high-power topologies, combining a low drain source resistance of 900mΩ with a maximum power dissipation rating of 127W. Its operating temperature range from -55°C to 150°C makes it suitable for demanding environments.
The device includes an integrated fast body diode, providing excellent hard-commutation ruggedness, which improves system safety margins and power density. Typical gate charge of 53nC supports rapid switching, contributing to light-load and full-load efficiency improvements in industrial SMPS.
Applications for this MOSFET include server power supplies, telecommunications equipment, solar power inverters, and electric vehicle charging stations where high efficiency and reliability are paramount.
High maximum power dissipation of 127W suitable for industrial applications. Low maximum drain source resistance of 900mΩ for efficient switching. Operates reliably from -55°C up to 150°C ambient temperature. Typical gate charge of 53nC supports fast switching performance.
Designed for through-hole mounting in TO-247 package. Integrated fast body diode enhances hard-commutation ruggedness. Improves efficiency in industrial SMPS applications. Ideal for servers, telecom, solar, and EV charging applications.
This Infineon CoolMOS MOSFET exemplifies advanced semiconductor design, enabling power density increases and efficiency gains critical for modern industrial electronics. Browse the Electronics & Electricals category on EnvMart for similar power management components and semiconductor devices optimized for demanding applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 25 A.
It can handle a maximum drain source voltage of 700 V.
The maximum power dissipation rating is 127 W.
The typical gate charge is 53 nC.
It features a low maximum drain source resistance of 900 mΩ.
It operates reliably within a temperature range of -55°C to 150°C.
This model is designed for through-hole mounting in a TO-247 package.
This device has a pin count of 3.
It is suitable for applications in server power supplies, telecommunications equipment, solar power inverters, and electric vehicle charging stations.
The maximum gate source voltage is 20 V.
The forward voltage of the integrated fast body diode is 1 V.
The country of origin for this device is India.
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