$156.49
$151.80
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon Isolated F4 Type N-Channel MOSFET 25 A 1200 V 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.4mm |
| Length | 62.8mm |
| Model | F445MR12W1M1B76BPSA1 |
| Series | F4 |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-EASY2B |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | 60749 and 60068, IEC 60747 |
| Pin Count | 2 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Maximum Power Dissipation Pd | 20mW |
| Typical Gate Charge Qg @ Vgs | 0.062μC |
| Forward Voltage Vf | 5.65V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET features an isolated transistor configuration with excellent thermal performance.
- The package type AG-EASY2B enables easy chassis mounting applications.
- Maximum power dissipation is 20 mW for efficient energy management.
- Typical gate charge of 0.062 μC allows fast switching speeds.
- Operating temperature ranges from -40°C to 150°C ensuring reliable operation under extreme conditions.
- The maximum drain-source resistance is 45 mΩ supporting low conduction losses.
- The device complies with IEC 60747, 60749, and 60068 standards for quality assurance.
- Its forward voltage is 5.65 V providing predictable voltage drop characteristics.
Product Description
Infineon F445MR12W1M1B76BPSA1 isolated F4 type N-Channel MOSFET is designed for high-voltage power switching applications, capable of handling a maximum continuous drain current of 25 A and a maximum drain-source voltage of 1200 V. Its isolated transistor configuration and AG-EASY2B package type allow for easy chassis mounting and integration into industrial electronic circuits.
This MOSFET features a maximum power dissipation of 20 mW and a typical gate charge of 0.062 μC at Vgs, enabling efficient and rapid switching suitable for power management systems. The device operates reliably over a temperature range from -40°C to 150°C, making it suitable for demanding industrial and automotive environments.
The low maximum drain-source resistance of 45 mΩ reduces conduction losses, improving overall system efficiency. It meets rigorous standards including IEC 60747, 60749, and 60068, ensuring high quality and reliability for semiconductor applications. The device includes 2 pins in the AG-EASY2B package format to facilitate secure electrical connections in power modules and driving circuits.
This component is ideal for applications in industrial power electronics, motor controls, power supplies, and automotive electronics where high voltage and current handling are necessary. The MOSFET’s compact form factor, measuring 62.8 mm in length and 16.4 mm in height, supports versatile mounting configurations.
This MOSFET supports applications requiring high voltage, high current with isolation. Its industrial-grade temperature range ensures performance in harsh environments. The device’s low gate charge leads to efficient switching in power electronics.
Compliance with international standards guarantees reliable operation and safety. The product’s chassis mount packaging aids sturdiness and installation ease. The forward voltage characteristic enables precise voltage drop control.
It is suited for power conversion, switching regulators, and motor driver units. Designed to comply with stringent automotive and industrial demands (though this product is marked "Automotive Standard: No"). Its isolated configuration prevents electrical interference and enhances circuit robustness.
Explore more Infineon MOSFETs and power semiconductor devices on EnvMart for robust and reliable solutions suitable for varied industrial, manufacturing, and electronic design requirements.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 25 A.
It can handle a maximum drain-source voltage of 1200 V.
The typical gate charge is 0.062 μC at Vgs.
The package type is AG-EASY2B, which allows for easy chassis mounting.
The operating temperature range is from -40°C to 150°C.
The maximum power dissipation is 20 mW.
The maximum drain-source resistance is 45 mΩ.
It complies with IEC 60747, 60749, and 60068 standards.
It measures 62.8 mm in length and 16.4 mm in height.
The forward voltage is 5.65 V, providing predictable voltage drop characteristics.
This model is suitable for applications in industrial power electronics, motor controls, power supplies, and automotive electronics.
This MOSFET has 2 pins in the AG-EASY2B package format.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$156.49
$151.80
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent