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DiodesZetex P-Channel MOSFET 1.1 A 30 V Enhancement Mode Surface Mount 3-Pin SOT-23 ZXM61P03FTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZXM61P03FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.1A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 4.8nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -0.95V |
Key Features
- Type P channel enhancement mode MOSFET designed for surface mount applications.
- Maximum continuous drain current of 1.1 amperes supports moderate load currents.
- Drain-source voltage rating of 30 volts ensures suitability for low voltage circuits.
- Compact 3-pin SOT-23 package measuring 3.05 mm length, 1.4 mm width, and 1 mm height.
- Maximum power dissipation of 806 milliwatts maintains device reliability under load.
- Low maximum drain-source resistance of 550 milliohms for efficient conduction.
- Typical gate charge of 4.8 nanocoulombs at Vgs, ensuring fast switching performance.
- Wide operating temperature range from -55° to 150° Celsius supports harsh environments.
Product Description
DiodesZetex ZXM61P03FTA is a Type P-Channel enhancement mode MOSFET packaged in a compact 3-pin SOT-23 surface mount format. It features a maximum continuous drain current of 1.1 A and a maximum drain-source voltage of 30 V, making it ideal for low voltage switching and amplification applications in electronic circuits.
The device exhibits a low maximum drain-source resistance of 550 milliohms, which ensures high efficiency and minimal power loss during operation. Its maximum power dissipation capability of 806 milliwatts supports moderate power applications while maintaining thermal stability.
The typical gate charge of 4.8 nanocoulombs allows for fast switching transitions, enhancing the efficiency of PWM and switching regulators. With a maximum gate-source voltage of 20 V and a forward voltage of -0.95 V, the transistor can be reliably driven in various electronic designs.
Physically, the MOSFET measures 3.05 mm in length, 1.4 mm in width, and 1 mm in height, facilitating easy PCB layout and high-density mounting. It operates reliably over a wide temperature range from -55° Celsius to 150° Celsius, making it suitable for automotive, industrial, and consumer electronics applications.
The product complies with the automotive reliability standard AEC-Q101, assuring long-term durability and performance in demanding environments. This MOSFET is often used in power management circuits, switching regulators, motor controls, and amplification stages in industrial and automotive electronics.
Type P-Channel enhancement mode MOSFET. Maximum continuous drain current of 1.1 A. Maximum drain-source voltage of 30 V. 3-pin SOT-23 surface mount package. Low drain-source resistance and typical gate charge ensure efficient switching.
Wide operating temperature range from -55° to 150° Celsius. Automotive standard AEC-Q101 qualified for reliable automotive use.
For industrial, automotive, and commercial electronic circuit design, this DiodesZetex MOSFET provides a reliable and efficient switching solution. Explore more semiconductor components on EnvMart for a broad range of power and discrete electronic devices.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.1 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It is packaged in a 3-pin SOT-23 format, measuring 3.05 mm in length, 1.4 mm in width, and 1 mm in height.
The maximum power dissipation for this model is 806 mW.
The typical gate charge is 4.8 nC at Vgs.
It operates over a wide temperature range from -55°C to 150°C.
This model complies with the automotive reliability standard AEC-Q101.
The maximum gate-source voltage for this MOSFET is 20 V.
The maximum drain-source resistance is 550 mΩ.
This device is suitable for low voltage switching and amplification applications in electronic circuits, including power management circuits and motor controls.
It features a low maximum drain-source resistance of 550 mΩ, which ensures efficient conduction and minimal power loss during operation.
The forward voltage is -0.95 V.
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