DiodesZetex Type P-Channel MOSFET, 1.1 A Continuous Drain Current, 30 V Drain Source Voltage, 3-Pin SOT-23 ZXM61P03FTA

DiodesZetex ZXM61P03FTA is a high-quality Type P-Channel MOSFET designed for surface mount technology with a compact 3-Pin SOT-23 package. This enhancement-mode MOSFET features a maximum continuous drain current of 1.1 A and a maximum drain-source voltage of 30 V, making it ideal for low power electronic switching applications and signal processing circuits.

The device offers a maximum drain-source resistance (Rds) of 550 milliohms, which contributes to its efficient conduction characteristics and lower power dissipation. It exhibits a maximum power dissipation of 806 mW, supporting stable operation under load with a high-temperature tolerance up to 150°C. This reliability is further ensured by conformity to the automotive AEC-Q101 standard, qualifying the component for automotive and industrial use.

With a typical gate charge of 4.8 nC at the gate-source voltage, the MOSFET is suitable for rapid switching applications. Its small form factor with dimensions of 3.05 mm (length) by 1.4 mm (width) by 1 mm (height) permits its use in compact circuit assemblies and densely populated printed circuit boards.

This MOSFET operates with a negative forward voltage of approximately -0.95 V and a maximum gate-source voltage of 20 V. It can function safely within an operating temperature range from -55°C to 150°C, making it reliable across a broad range of environmental conditions.

Ideal for industrial, automotive, consumer electronics, and HVAC applications, the ZXM61P03FTA is useful in designs requiring a durable, efficient P-Channel MOSFET with surface mount convenience. Its performance characteristics enable designers to optimize power management and signal control in modern electronic circuits.

Type P-Channel enhancement-mode MOSFET in SOT-23 package. Maximum continuous drain current: 1.1 A. Maximum drain-source voltage: 30 V. Maximum power dissipation: 806 mW. Maximum drain-source resistance: 550 mΩ. Operating temperature range: -55°C to 150°C.

Complies with automotive AEC-Q101 standard. Typical gate charge: 4.8 nC at gate-source voltage. Compact size: 3.05 mm x 1.4 mm x 1 mm. Explore more semiconductor components and MOSFETs within EnvMart’s extensive catalog for your advanced electronic and industrial design requirements.