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DiodesZetex Type P-Channel MOSFET, 900 mA Continuous Drain Current, 20 V Drain Source Voltage, Enhancement Mode ZXM61P02FTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZXM61P02FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 900mA |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | -0.95V |
Key Features
- This device operates in enhancement mode suitable for various switching applications.
- It features a low drain-source resistance of 900 mΩ for efficient power handling.
- Maximum power dissipation is rated at 806 mW for reliable performance.
- Wide operating temperature range from -55°C to 150°C supports harsh environments.
- The MOSFET includes automotive-grade AEC-Q101 compliance for quality assurance.
- Typical gate charge of 3.5 nC ensures fast switching.
- Maximum gate-source voltage is 12 V with a forward voltage of -0.95 V.
Product Description
The DiodesZetex ZXM61P02FTA is a P-Channel enhancement mode MOSFET designed for efficient power switching and control in industrial and automotive electronics. Featuring a maximum continuous drain current of 900 mA and a maximum drain-source voltage of 20 V, this device is housed in a compact 3-pin SOT-23 surface mount package ideal for space-constrained circuit boards.
Its low drain-source resistance of 900 mΩ minimizes conduction losses, enhancing efficiency in power management systems. The MOSFET supports a maximum power dissipation of 806 mW, making it suitable for moderate power applications in industrial equipment, telecommunications, and automotive electronics.
Designed to operate reliably across a wide temperature range from -55°C up to 150°C, the ZXM61P02FTA is well-suited for harsh environment applications. It is compliant with automotive AEC-Q101 standards, ensuring vehicular grade robustness and reliability.
The device boasts a typical gate charge of 3.5 nC at a gate-source voltage of 3.5 V, allowing for fast switching speeds which benefit high-frequency circuits. With compact physical dimensions of 3.05 mm length, 1.4 mm width, and 1 mm height, it efficiently saves PCB space.
This MOSFET operates in enhancement mode offering controlled switching. Maximum continuous drain current rating of 900 mA supports moderate loads. Low Rds(on) of 900 mΩ reduces power losses under load. Wide temperature operation from -55°C to 150°C supports industrial and automotive usage.
Compliant with AEC-Q101 Automotive standards. Compact 3-pin SOT-23 package size for surface mounting. Typical gate charge of 3.5 nC facilitates high switching speeds. Forward voltage of -0.95 V enables efficient conduction.
This MOSFET finds application in power switching circuits, battery management systems, load switching in automotive electronics, and industrial control equipment. Its small form factor and automotive certification make it especially valuable in compact and demanding environments.
EnvMart offers this high-quality semiconductor component designed to meet rigorous performance demands in industrial, automotive, and electronic manufacturing sectors. Browse additional MOSFET and semiconductor solutions through EnvMart for your next engineering project.
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Frequently Asked Questions
The maximum continuous drain current for this model is 900 mA.
The maximum drain-source voltage for the ZXM61P02FTA is 20 V.
The typical gate charge at a gate-source voltage of 3.5 V is 3.5 nC.
The maximum power dissipation for the ZXM61P02FTA is rated at 806 mW.
This MOSFET has dimensions of 3.05 mm in length, 1.4 mm in width, and 1 mm in height.
The operating temperature range for this model is from -55°C to 150°C.
It is housed in a compact SOT-23 surface mount package.
Yes, this model is compliant with AEC-Q101 automotive standards.
The maximum gate-source voltage for the ZXM61P02FTA is 12 V.
The forward voltage for the ZXM61P02FTA is -0.95 V.
This MOSFET features a P-channel type channel.
The maximum drain-source resistance (Rds(on)) is 900 mΩ.
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