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onsemi SUPERFET III Type N-Channel MOSFET, 6 A, 650 V, 3-Pin TO-220 FCPF600N65S3R0L-F154

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onsemi SUPERFET III Type N-Channel MOSFET, 6 A, 650 V, 3-Pin TO-220 FCPF600N65S3R0L-F154

Name: onsemi SUPERFET III Type N-Channel MOSFET, 6 A, 650 V, 3-Pin TO-220 FCPF600N65S3R0L-F154
Brand: onsemi
SKU: 112001
Price: 2.09 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	4.8mm
Length	16.2mm
Model	FCPF600N65S3R0L-F154
Width	10.4mm
Mount Type	Through Hole
Series	SUPERFET III
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type N
Maximum Continuous Drain Current Id	6A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	600mΩ
Channel Mode	N
Maximum Power Dissipation Pd	24W
Typical Gate Charge Qg @ Vgs	11nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V

Key Features

Utilizes charge balance technology for extremely low on-resistance and gate charge.
Maximum continuous drain current of 6 amperes with a low Rds(on) of 600 milliohms.
Operates with a maximum drain source voltage of 650 volts.
Packaged in a compact 3-pin TO-220 through-hole format for easy mounting.
Typical gate charge of 11 nanoCoulombs ensures efficient switching performance.
Maximum power dissipation rating of 24 watts supports high power applications.
Wide operating temperature range from -55°C to 150°C for reliability in harsh environments.
Low forward voltage of 1.2 volts for improved efficiency in conduction.

Product Description

onsemi FCPF600N65S3R0L-F154 is a SUPERFET III Type N-Channel MOSFET designed for demanding power semiconductor applications. It delivers a maximum continuous drain current of 6 A and supports up to 650 V drain source voltage, packaged in a 3-pin TO-220 form factor suitable for through-hole mounting.

This MOSFET employs advanced charge balance technology to achieve outstanding low on-resistance and gate charge characteristics, significantly reducing conduction losses and enabling superior switching performance. It features a maximum power dissipation capability of 24 W, making it suitable for a variety of industrial and electronic equipment, including power supply circuits, motor drives, and switching regulators.

The device operates reliably over a wide temperature range from -55°C to 150°C, ensuring stable performance in both industrial and commercial environments. Its robust design includes a typical gate charge of 11 nC at the specified gate-source voltage and a low forward voltage drop of 1.2 V, optimizing both switching speed and conduction efficiency.

Physically, the MOSFET measures 16.2 mm in length, 10.4 mm in width, and 4.8 mm in height, complying with standard TO-220 package dimensions. The three-pin configuration facilitates straightforward PCB integration and mounting.

The onsemi SUPERFET III series is lead-free and RoHS compliant, ready to meet modern environmental standards. Its avalanche ruggedness and dv/dt tolerance make it reliable for use in critical power electronics applications.

Utilizes charge balance technology for low on-resistance and gate charge. 6 A maximum continuous drain current with 650 V maximum drain source voltage. 3-pin TO-220 package with through-hole mount type. Maximum power dissipation of 24 W and maximum operating temperature of 150°C.

Wide operating temperature range from -55°C to 150°C. Typical gate charge of 11 nC at gate-source voltage. Low forward voltage drop of 1.2 V improves efficiency. RoHS compliant and Pb-free design. Suitable for industrial and power electronics applications.

Explore the wide range of power MOSFETs and semiconductor components available at EnvMart for enhanced performance and reliability in your electronic designs.