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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 6.3mm |
| Length | 5.3mm |
| Model | NTMFS0D5N |
| Width | 1.1mm |
| Mount Type | Surface |
| Series | NTMFS0D5N |
| Maximum Operating Temperature | 175°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 464A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 178nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
onsemi NTMFS0D5N Type N-Channel Power MOSFET offers high-performance switching with a maximum continuous drain current of 464 A and a maximum drain-source voltage of 30 V. This enhancement mode MOSFET comes in a compact 5-pin DFN surface mount package measuring 5.3 x 1.1 x 6.3 mm, suitable for space-constrained designs.
The device features an ultra-low Rds(on) of 0.52 mΩ, greatly reducing conduction losses and improving overall system efficiency. With a maximum power dissipation of 200 W, it can handle heavy loads while maintaining reliability in harsh industrial or automotive environments.
The wide operating temperature range from -55°C to 175°C ensures stable operation across extreme environmental conditions. A maximum gate-source voltage of 20 V and typical gate charge of 178 nC allow for precise and efficient gate control. The forward voltage of 1.2 V further supports efficient power transfer during conduction.
This high-current MOSFET is ideal for applications in power management modules, industrial controls, and electronic systems requiring robust switching components. The surface mount DFN package facilitates easy integration into modern electronic assemblies.
The device uses an enhancement mode single N-channel configuration to optimize system efficiency. It features an ultra-low on-resistance Rds(on) of 0.52 mΩ to minimize power loss. The 5-pin DFN surface mount package measures 5.3 mm in length, 1.1 mm in width, and 6.3 mm in height.
Maximum power dissipation of 200 W allows operation in demanding thermal environments. Supports a wide operating temperature range from -55°C to 175°C for robust performance. Maximum gate-source voltage rating is 20 V for reliable switching control.
Typical gate charge at Vgs is 178 nC, facilitating efficient gate drive. Forward voltage is 1.2 V, supporting high current conduction efficiency. Ideal for industrial, power management, and electronic control applications.
This product is well-suited for use in industrial machinery, automotive electronics, and power supply design, providing high reliability and superior thermal management. Explore additional onsemi semiconductor products on EnvMart for a comprehensive electronics components selection.
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