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onsemi Type N-Channel Power MOSFET 30 V, 464 A, Enhancement Mode, 5-Pin DFN Package NTMFS0D5N

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 6.3mm
Length 5.3mm
Model NTMFS0D5N
Width 1.1mm
Mount Type Surface
Series NTMFS0D5N
Maximum Operating Temperature 175°C
Package Type DFN
Minimum Operating Temperature -55°C
Pin Count 5
Channel Type Type N
Maximum Continuous Drain Current Id 464A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 0.52mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 200W
Typical Gate Charge Qg @ Vgs 178nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • The device uses an enhancement mode single N-channel configuration to optimize system efficiency.
  • It features an ultra-low on-resistance Rds(on) of 0.52 mΩ to minimize power loss.
  • The 5-pin DFN surface mount package measures 5.3 mm in length, 1.1 mm in width, and 6.3 mm in height.
  • Maximum power dissipation of 200 W allows operation in demanding thermal environments.
  • Supports a wide operating temperature range from -55°C to 175°C for robust performance.
  • Maximum gate-source voltage rating is 20 V for reliable switching control.
  • Typical gate charge at Vgs is 178 nC, facilitating efficient gate drive.
  • Forward voltage is 1.2 V, supporting high current conduction efficiency.

Product Description

onsemi NTMFS0D5N Type N-Channel Power MOSFET offers high-performance switching with a maximum continuous drain current of 464 A and a maximum drain-source voltage of 30 V. This enhancement mode MOSFET comes in a compact 5-pin DFN surface mount package measuring 5.3 x 1.1 x 6.3 mm, suitable for space-constrained designs.

The device features an ultra-low Rds(on) of 0.52 mΩ, greatly reducing conduction losses and improving overall system efficiency. With a maximum power dissipation of 200 W, it can handle heavy loads while maintaining reliability in harsh industrial or automotive environments.

The wide operating temperature range from -55°C to 175°C ensures stable operation across extreme environmental conditions. A maximum gate-source voltage of 20 V and typical gate charge of 178 nC allow for precise and efficient gate control. The forward voltage of 1.2 V further supports efficient power transfer during conduction.

This high-current MOSFET is ideal for applications in power management modules, industrial controls, and electronic systems requiring robust switching components. The surface mount DFN package facilitates easy integration into modern electronic assemblies.

The device uses an enhancement mode single N-channel configuration to optimize system efficiency. It features an ultra-low on-resistance Rds(on) of 0.52 mΩ to minimize power loss. The 5-pin DFN surface mount package measures 5.3 mm in length, 1.1 mm in width, and 6.3 mm in height.

Maximum power dissipation of 200 W allows operation in demanding thermal environments. Supports a wide operating temperature range from -55°C to 175°C for robust performance. Maximum gate-source voltage rating is 20 V for reliable switching control.

Typical gate charge at Vgs is 178 nC, facilitating efficient gate drive. Forward voltage is 1.2 V, supporting high current conduction efficiency. Ideal for industrial, power management, and electronic control applications.

This product is well-suited for use in industrial machinery, automotive electronics, and power supply design, providing high reliability and superior thermal management. Explore additional onsemi semiconductor products on EnvMart for a comprehensive electronics components selection.

onsemi Type N-Channel Power MOSFET 30 V, 464 A, Enhancement Mode, 5-Pin DFN Package NTMFS0D5N
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Frequently Asked Questions

The maximum continuous drain current of this model is 464 A.

It has a maximum drain-source voltage rating of 30 V.

This unit features an ultra-low on-resistance Rds(on) of 0.52 mΩ.

The maximum power dissipation of this MOSFET is 200 W.

The DFN package measures 5.3 mm in length, 1.1 mm in width, and 6.3 mm in height.

It supports a wide operating temperature range from -55°C to 175°C.

The maximum gate-source voltage rating is 20 V.

The typical gate charge at Vgs is 178 nC.

This device uses an enhancement mode single N-channel configuration.

It is ideal for applications in power management modules, industrial controls, and electronic systems requiring robust switching components.

The forward voltage is 1.2 V, supporting high current conduction efficiency.

The DFN package has a pin count of 5.

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