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Vishay 100 V 20 A Surface Mount Schottky Diode 8-Pin FPAK V20KM120HM3/H

Category Schottky Diodes & Rectifiers Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1.09mm
Length 6.35mm
Model V20KM120HM3/H
Width 5.3mm
Mount Type Surface
Maximum Operating Temperature 165°C
Package Type FPAK
Minimum Operating Temperature -40°C
Standards/Approvals RoHS
Pin Count 8
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 20A
Peak Reverse Repetitive Voltage Vrrm 100V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 30mA
Peak Non-Repetitive Forward Surge Current Ifsm 220A
Maximum Forward Voltage Vf 0.87V

Key Features

  • The diode features a low forward voltage drop of 0.87 V for high efficiency.
  • It supports a peak reverse repetitive voltage of 100 V ensuring robust blocking.
  • Maximum continuous forward current rating is 20 A, suitable for high current applications.
  • Designed with Trench MOS Barrier technology for ultra-low voltage drop.
  • Operating temperature ranges from -40° C to 165° C for reliability under harsh conditions.
  • Peak non-repetitive forward surge current is rated at 220 A for transient tolerance.
  • Compact dimensions of 6.35 mm length, 5.3 mm width, and 1.09 mm height facilitate dense PCB layouts.
  • Compliant with RoHS and automotive standard AEC-Q101 ensuring quality and environmental safety.

Product Description

Vishay V20KM120HM3/H is a surface mount Schottky diode rated for 100 volts peak reverse voltage and 20 amperes continuous forward current. The device is packaged in an 8-pin FPAK form factor, making it compact for modern electronics applications.

This diode employs Trench MOS Barrier Schottky technology which offers ultra-low forward voltage drop measured at 0.45 V at 5 A, minimizing power losses and enhancing operational efficiency. The 0.87 V maximum forward voltage at full load further reduces heat dissipation and improves performance.

It is designed for use in low voltage, high frequency inverters, freewheeling diode roles, DC/DC converters, and polarity protection circuits in various industrial, automotive, telecommunications, and consumer electronics applications. The wide operating temperature range from -40° C to 165° C enables reliable use in harsh and automotive environments compliant to AEC-Q101.

The diode supports a peak non-repetitive forward surge current of 220 A, providing robustness against transient spikes. With dimensions measuring 6.35 mm length, 5.3 mm width, and 1.09 mm height, it is ideal for space-constrained PCB layouts.

Trench MOS Schottky technology for low forward voltage drop. High efficiency operation with low power losses. Compliance with RoHS environmental directives. Automotive standard AEC-Q101 qualified for vehicle applications.

Suitable for power supply, inverter, and DC/DC converter circuits.

This Schottky diode is optimized for a variety of industrial and electronics manufacturing needs. Explore more semiconductor components and power solutions from Vishay in the EnvMart catalog to enhance your designs.

Explore more products in our Schottky Diodes & Rectifiers category.

Vishay 100 V 20 A Surface Mount Schottky Diode 8-Pin FPAK V20KM120HM3/H
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Frequently Asked Questions

The maximum peak reverse repetitive voltage rating for this diode is 100 V.

This model has a maximum continuous forward current rating of 20 A.

The maximum forward voltage drop at full load is 0.87 V.

The diode operates within a temperature range of -40°C to 165°C.

It is packaged in an 8-pin FPAK form factor.

The peak non-repetitive forward surge current is rated at 220 A.

Yes, it is compliant with RoHS environmental directives and automotive standard AEC-Q101.

It is suitable for use in low voltage, high frequency inverters, DC/DC converters, and polarity protection circuits.

The diode has a height of 1.09 mm and a width of 5.3 mm.

The maximum forward current rating is 20 A.

This diode employs Trench MOS Barrier technology for ultra-low forward voltage drop.

The peak reverse current is rated at 30 mA.

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