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Infineon HEXFET Type N-Channel MOSFET 9.3 A 80 V Enhancement 8-Pin SOIC IRF7493TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 5mm |
| Model | IRF7493TRPBF |
| Width | 4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 9.3A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 35nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- HEXFET technology reduces conduction losses.
- Enhancement mode channel for efficient switching.
- Maximum power dissipation of 2.5 W ensures reliable operation.
- Compact surface-mount design with 1.5 mm height and 5 mm length.
- Wide operating temperature range from -55°C to 150°C.
- Low typical gate charge of 35 nC at Vgs.
- Maximum gate-source voltage rating of 20 V for durability.
- Forward voltage of 1.3 V suitable for power applications.
Product Description
Infineon IRF7493TRPBF HEXFET Type N-Channel MOSFET is designed for use in power-efficient electronic circuits requiring reliable switching performance. It supports a maximum continuous drain current of 9.3 A and a drain-source voltage rating of 80 V, making it suitable for various industrial, automotive, and consumer electronic applications.
This surface-mount device comes in an 8-pin SOIC package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height, enabling easy board integration. Featuring enhancement mode channel operation, the MOSFET delivers low conduction losses through HEXFET technology, promoting high efficiency in power management designs.
It can operate safely across a wide temperature range from -55°C to 150°C, supporting robust functionality under diverse environmental conditions. The maximum power dissipation is 2.5 W, accommodating moderate power loads with stability.
The device has a typical gate charge of 35 nC at the gate-source voltage level, allowing swift switching with minimal energy loss. The maximum gate-source voltage is 20 V, safeguarding the MOSFET against gate overvoltage.
Key features include a forward voltage of 1.3 V and an 8-pin configuration, providing versatility in circuit design and applications in power electronics, motor control, and switching regulators.
HEXFET technology reduces conduction losses. Enhancement mode channel for efficient switching. Maximum power dissipation of 2.5 W ensures reliable operation. Compact surface-mount design with 1.5 mm height and 5 mm length.
Wide operating temperature range from -55°C to 150°C. Low typical gate charge of 35 nC at Vgs. Maximum gate-source voltage rating of 20 V for durability. Forward voltage of 1.3 V suitable for power applications. Pin count of 8 facilitating versatile circuit integration.
This Infineon MOSFET is ideal for use in industrial electronics, automotive systems, power management circuits, and other applications requiring compact yet high-performance semiconductor switches.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.3 A.
This MOSFET has a maximum drain-source voltage rating of 80 V.
The typical gate charge at gate-source voltage (Vgs) is 35 nC.
The maximum power dissipation of this model is 2.5 W.
The dimensions of the SOIC package are 5 mm in length, 4 mm in width, and 1.5 mm in height.
It can operate safely across a wide temperature range from -55°C to 150°C.
This model features an enhancement mode N-channel configuration.
The maximum gate-source voltage rating for this device is 20 V.
The forward voltage is rated at 1.3 V.
This device has a pin count of 8, facilitating versatile circuit integration.
The maximum drain-source resistance is 15 mΩ.
This model is suitable for industrial electronics, automotive systems, and power management circuits.
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