$0.72
$0.70
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon IPD Type N-Channel MOSFET 6 A 600 V Enhancement 3-Pin TO-252 IPD60R600P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD60R600P7ATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 41W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Maximum continuous drain current of 6 amperes.
- Drain-source voltage rating up to 600 volts for high voltage applications.
- Low on-resistance of 600 milliohms for efficient conduction.
- Compact 3-pin TO-252 surface mount package.
- Enhancement mode N-channel type for controlled switching.
- Maximum power dissipation of 41 watts ensures reliable operation.
- Wide operating temperature range from -40°C to 150°C.
- Typical gate charge of 9 nanocoulombs enabling fast switching.
Product Description
Infineon IPD60R600P7ATMA1 is a 600 V CoolMOS™ P7 superjunction type N-Channel MOSFET optimized for high efficiency and ease of use in power electronics designs. This discrete semiconductor device delivers a maximum continuous drain current of 6 A and a maximum drain-source voltage rating of 600 V, making it suitable for industrial, commercial, and laboratory applications requiring precise power switching.
The TO-252 surface mount package with 3 pins provides compact mounting on printed circuit boards while facilitating excellent thermal dissipation with a power rating of up to 41 W. The MOSFET features an enhancement mode channel and a low drain-source resistance of 600 milliohms, which contributes to high conduction efficiency and reduced power losses.
Designed for robust performance, it has a typical gate charge of 9 nC at gate-source voltage of 10 V and can tolerate a maximum gate-source voltage of 20 V. The device supports an operating temperature range from -40°C minimum up to 150°C maximum, ensuring reliability under demanding thermal conditions. Its integrated gate resistor and rugged body diode increase ruggedness with an electrostatic discharge (ESD) rating of ≥ 2 kV (HBM class 2).
Applications include industrial power supplies, motor controls, renewable energy systems, and general purpose power switching tasks in construction and manufacturing environments. The compact dimensions (length 6.73 mm, width 6.22 mm, height 2.41 mm) enable its use in space-constrained circuits.
Maximum continuous drain current of 6 amperes. Maximum drain-source voltage of 600 volts. Low on-resistance of 600 mΩ ensuring efficient conduction. Enhancement mode N-channel semiconductor. Compact 3-pin TO-252 surface mount package.
Maximum power dissipation rated at 41 W. Typical gate charge of 9 nC supporting fast switching. Operating temperature range from -40°C to 150°C. Maximum gate-source voltage of 20 V for robust operation. Rugged body diode and integrated gate resistor improve reliability.
Explore more semiconductor solutions at EnvMart for industrial and electronic component needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 6 amperes.
This MOSFET has a maximum drain-source voltage rating of 600 volts.
It features a low on-resistance of 600 milliohms, contributing to efficient conduction.
The device comes in a compact 3-pin TO-252 surface mount package.
It operates within a temperature range from -40°C to 150°C.
The typical gate charge is 9 nanocoulombs at a gate-source voltage of 10 V.
The maximum gate-source voltage is 20 volts, ensuring robust operation.
It is suitable for industrial power supplies, motor controls, renewable energy systems, and general-purpose power switching tasks.
The maximum power dissipation is rated at 41 watts, ensuring reliable operation.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
This model uses an enhancement mode N-channel type for controlled switching.
The country of origin for this MOSFET is India.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$0.72
$0.70
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent