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Infineon CoolMOS Type N-Channel MOSFET, 9.9 A, 600 V, 3-Pin TO-220 IPAN60R650CEXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 29.87mm |
| Length | 16.1mm |
| Model | IPAN60R650CEXKSA1 |
| Width | 4.8mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 9.9A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 650mΩ |
| Channel Mode | P |
| Maximum Power Dissipation Pd | 82W |
| Typical Gate Charge Qg @ Vgs | 20.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Designed for hard and soft switching applications offering improved efficiency.
- Features low conduction and switching losses enhancing power consumption.
- Contains 3 pins configured in a TO-220 through-hole mount package.
- Maximum power dissipation rated at 82 W enabling robust performance.
- Gate charge of 20.5 nC at Vgs typical for efficient gate driving.
- Wide operating temperature range from -40°C to 150°C for versatile use.
- Low forward voltage of 0.9 V reducing power loss during conduction.
- Optimized Rds(on) to minimize energy storage and switching losses.
Product Description
Infineon's IPAN60R650CEXKSA1 is a CoolMOS Type N-Channel MOSFET presented in a durable 3-pin TO-220 package designed for both hard and soft switching industrial and commercial applications. It features a continuous drain current of 9.9 A and can withstand a maximum drain-source voltage of 600 V, offering efficient power handling and improved energy savings.
The MOSFET is optimized with low conduction and switching losses, making it suitable for use in low power chargers for mobile phones, tablets, and similar electronics. Its enhanced body diode ruggedness and reduced reverse recovery charge improve reliability in demanding switching environments.
With a maximum power dissipation of 82 W and gate charge of 20.5 nC typical at Vgs, this device enables efficient gate control and thermal management. The operating temperature range from -40°C to 150°C ensures stable operation under extreme conditions.
The component measures 29.87 mm in height, 16.1 mm in length, and 4.8 mm in width, and mounts through-hole via its 3-pin configuration. Its typical forward voltage of 0.9 V helps reduce power losses further during conduction.
Engineered without automotive standards compliance, it is tailored for industrial, laboratory, manufacturing, and electronic power management applications. This device delivers superior efficiency and switching performance, reducing overall power consumption and enhancing system reliability.
Designed for efficient hard and soft switching applications. Low conduction and switching losses improve overall energy efficiency. Robust thermal and electrical ratings for varied industrial environments. Compact TO-220 package with through-hole mounting for ease of installation.
Optimized body diode ruggedness and reduced reverse recovery for reliability. Suitable for low power chargers in mobile and portable electronics. Wide operational temperature range supports harsh operating conditions. Ideal choice for power supply design and power management in electronics.
Enhanced performance reduces power dissipation and improves endurance. Explore more advanced MOSFET options and electronic components in our extensive semiconductor catalogue at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.9 A.
This MOSFET can withstand a maximum drain-source voltage of 600 V.
It comes in a TO-220 package type, designed for through-hole mounting.
The operating temperature range is from -40°C to 150°C.
The typical gate charge at Vgs is 20.5 nC.
The maximum power dissipation is rated at 82 W.
The typical forward voltage is 0.9 V, which helps reduce power loss during conduction.
This model has 3 pins configured for mounting.
The maximum gate-source voltage is 20 V.
It is suitable for industrial, laboratory, manufacturing, and electronic power management applications.
This device is a Type N-channel MOSFET.
The maximum drain-source resistance is 650 mΩ.
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