onsemi PowerTrench Type N-Channel MOSFET 6.1 A 60 V Enhancement, 8-Pin SOIC FDS5351

onsemi FDS5351 PowerTrench Type N-Channel MOSFET is a robust semiconductor device designed for high-efficiency switching and power management in electronic circuits. Featuring a maximum continuous drain current of 6.1 A and a maximum drain-source voltage rating of 60 V, it is engineered to handle demanding applications reliably.

This MOSFET employs an enhancement mode N-channel, ensuring optimal switching behavior with minimal conduction losses. The device comes in a compact 8-pin SOIC surface-mount package suitable for modern electronic assembly processes.

Thermal management is facilitated with a maximum power dissipation rating of 5 W, and the MOSFET is capable of operating in a wide temperature range from -55°C to 150°C, making it ideal for demanding industrial, manufacturing, and automotive applications, despite no declared automotive standard.

In addition, the device features a low typical gate charge of 19 nC at gate-source voltage, allowing fast switching speeds critical in power conversion and motor control systems. Its maximum gate-source voltage of ±20 V provides adequate protection against gate damage.

The compact physical dimensions of length 4.9 mm, width 3.9 mm, and height 1.57 mm make the FDS5351 a fitting choice for space-constrained layouts. Its low maximum drain-source resistance (Rds) of 58.8 mΩ and forward voltage of 1.3 V contribute to high efficiency and reliability in electronic power control.

Features a PowerTrench design optimizing conduction and switching performance. Utilizes an enhancement mode N-channel channel type for efficient operation. Maximum continuous drain current of 6.1 amperes ensures robust current handling.

Maximum drain-source voltage of 60 volts for versatile application suitability. Low maximum drain-source resistance of 58.8 milliohms enhances power efficiency. Supports surface mount technology with an 8-pin SOIC package format.

Maximum power dissipation rated at 5 watts for reliable thermal management. Wide operating temperature range from -55°C to 150°C for industrial use. Typical gate charge of 19 nanocoulombs at Vgs provides fast switching capability.

Maximum gate-source voltage of ±20 volts for gate protection. Compact dimensions with length 4.9 mm, width 3.9 mm, and height 1.57 mm. Forward voltage of 1.3 volts indicating low conduction losses.

This MOSFET is suitable for industrial manufacturing equipment, consumer electronics, power supplies, and other electronic applications needing efficient power switching. As a Discrete Semiconductor device from onsemi’s renowned portfolio, it supports engineers in designing reliable and compact power control solutions.

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