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Infineon Type N-Channel IGBT 40 A 600 V 3-Pin TO-247 Through Hole IKW40N60H3FKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW40N60H3FKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 2.12mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS, JEDEC |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | Type N |
| Maximum Power Dissipation Pd | 306W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- This IGBT features TrenchStop technology for excellent switching performance.
- The package type is TO-247 with a through-hole mount style.
- Maximum continuous collector current is 40 amperes.
- Maximum collector-emitter voltage is 600 volts.
- Maximum power dissipation of 306 watts allows efficient thermal handling.
- The device operates in a temperature range from -40°C to 175°C.
- Maximum gate-emitter voltage is ±20 volts ensuring robust control.
- Maximum collector-emitter saturation voltage is 2.5 volts reducing conduction losses.
Product Description
Infineon's IKW40N60H3FKSA1 is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching and control. This three-terminal semiconductor device combines fast switching characteristics with high current capacity, making it ideal for industrial, automotive, and electronic power applications.
The device features TrenchStop™ technology, enhancing its switching speed and reducing losses. Packaged in a durable TO-247 through-hole configuration with three pins, it supports easy PCB mounting and reliable thermal management.
Rated for a maximum continuous collector current of 40 A and a collector-emitter voltage of 600 V, it can dissipate up to 306 watts of power safely within a wide operating temperature range from -40°C to 175°C. The maximum gate-emitter voltage of ±20 V allows precise gate control, while the low collector-emitter saturation voltage of 2.5 V minimizes conduction losses and improves system efficiency.
This IGBT complies with RoHS and JEDEC standards, ensuring environmental compliance and quality reliability. Its energy rating of 2.12 millijoules supports fast switching cycles, making it suitable for power converters, motor drives, and switching power supplies.
Applications span industrial automation, power management, renewable energy systems, and electric vehicle drives, where high efficiency and rapid switching are critical. The robust construction and thermal tolerance of the IKW40N60H3FKSA1 ensure durability under demanding operational conditions.
This IGBT features TrenchStop technology for excellent switching performance. The package type is TO-247 with a through-hole mount style. Maximum continuous collector current is 40 amperes. Maximum collector-emitter voltage is 600 volts.
Maximum power dissipation of 306 watts allows efficient thermal handling. The device operates in a temperature range from -40°C to 175°C. Maximum gate-emitter voltage is ±20 volts ensuring robust control. Maximum collector-emitter saturation voltage is 2.5 volts reducing conduction losses.
Complies with RoHS and JEDEC standards for reliable performance. Energy rating of 2.12 millijoules supports high-speed switching applications. Explore more Infineon IGBTs and power semiconductor devices on EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous collector current for the IKW40N60H3FKSA1 is 40 amperes.
This model has a maximum collector-emitter voltage rating of 600 volts.
It can dissipate a maximum power of 306 watts, allowing for efficient thermal handling.
The device operates within a temperature range from -40°C to 175°C.
It features a through-hole mount style in a TO-247 package type.
The maximum gate-emitter voltage is ±20 volts, ensuring robust control.
The maximum collector-emitter saturation voltage is 2.5 volts, which helps reduce conduction losses.
The energy rating of this IGBT is 2.12 millijoules, supporting fast switching cycles.
It complies with RoHS and JEDEC standards, ensuring environmental compliance and quality reliability.
This IGBT has a pin count of 3.
It is suitable for applications in industrial automation, power management, renewable energy systems, and electric vehicle drives.
It features TrenchStop technology, which enhances switching speed and reduces losses.
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