Interested in this product? Drop us an email and we will let you know when it's available for order.
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon CoolMOS P7 Type N-Channel MOSFET 1.9 A 800 V Enhancement 3-Pin TO-252 IPD80R3K3P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD80R3K3P7ATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 3.3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 18W |
| Typical Gate Charge Qg @ Vgs | 5.8nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Utilizes CoolMOS P7 technology for high efficiency and performance.
- Rated for a maximum continuous drain current of 1.9 amperes.
- Maximum drain-to-source voltage is 800 volts suitable for high voltage applications.
- Enhancement mode channel configuration for reliable switching.
- Surface mount TO-252 package with three pins enhances PCB integration.
- Maximum power dissipation of 18 watts supports thermal management.
- Operates in temperature range from -55°C to 150°C offering wide environmental adaptability.
- Low typical gate charge of 5.8 nC for fast switching operations.
Product Description
Infineon IPD80R3K3P7ATMA1 CoolMOS P7 Type N-Channel MOSFET is engineered for industrial, power electronics, and LED lighting applications requiring high voltage and efficient switching performance. The device boasts a maximum continuous drain current of 1.9 A and a drain-source voltage rating of 800 V, making it ideal for hard and soft switching topologies.
Housed in a compact 3-pin TO-252 surface mount package, it facilitates ease of assembly and cost savings in high-density PCB designs. The enhancement channel mode and CoolMOS P7 technology provide superior performance with low on-resistance and optimized switching speed.
With a maximum power dissipation rating of 18 W and an operational temperature range from -55°C to 150°C, this MOSFET supports robust industrial conditions and thermal demands. Its typical gate charge of 5.8 nC enables fast switching, reducing power losses and enhancing efficiency.
Additional features include integrated Zener diode ESD protection and a maximum gate-source voltage of 20 V, ensuring device reliability and protection during operation. Utilizes CoolMOS P7 technology for high efficiency and performance.
Rated for a maximum continuous drain current of 1.9 amperes. Maximum drain-to-source voltage of 800 volts suitable for high voltage applications. Enhancement mode channel configuration for reliable switching. Surface mount TO-252 package with three pins enhances PCB integration.
Maximum power dissipation of 18 watts supports thermal management. Wide operating temperature range from -55°C to 150°C for versatile use. Low typical gate charge of 5.8 nC enables fast switching. Maximum gate-source voltage rating of 20 volts for safe operation.
Forward voltage drop of 0.9 volts contributes to efficiency.
This MOSFET is recommended for use in industrial power supplies, LED lighting drivers, low power chargers, auxiliary power supplies, and various audio and industrial power applications. It is ideal for designers seeking a rugged and efficient N-channel MOSFET to optimize power density and reduce assembly costs.
Explore the Infineon MOSFET range for reliable, high-performance switching components suitable for modern industrial electronics.
Explore more products in our MOSFETs category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 1.9 A.
It has a maximum drain-to-source voltage rating of 800 V, making it suitable for high voltage applications.
The typical gate charge is 5.8 nC, which enables fast switching operations.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.
The maximum power dissipation rating for this device is 18 W.
It operates within a temperature range from -55°C to 150°C.
The maximum gate-source voltage rating is 20 V, ensuring safe operation during use.
This model utilizes an enhancement mode channel configuration for reliable switching.
The TO-252 package has a total of 3 pins.
This MOSFET is a Type N-channel device.
The forward voltage drop is 0.9 V, which contributes to its efficiency.
Related Products
Other Products from this brand
Recently Viewed Products
Interested in this product? Drop us an email and we will let you know when it's available for order.
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent