Toshiba TK Type N-Channel MOSFET, 11.5 A, 600 V Enhancement Mode, 3-Pin TO-3PN TK12J60W,S1VQ(O

The Toshiba TK12J60W,S1VQ(O is a high-performance N-Channel MOSFET designed for industrial and electronic applications requiring efficient switching with high current and voltage capabilities. Featuring an enhancement mode channel, it supports a continuous drain current of 11.5 A and can tolerate a maximum drain-source voltage of 600 V. Its low on-resistance of 0.3 Ω aids in energy-efficient power management and reduced thermal buildup.

This MOSFET is packaged in a 3-pin TO-3PN form factor suitable for through-hole mounting, offering mechanical robustness and easy integration into power electronics assemblies. It dissipates up to 110 W of power, enabling use in demanding circuits including power supplies, motor drivers, and inverter applications.

Operating reliably over a wide temperature range from -55°C to 150°C, the device is engineered for industrial environments subject to thermal stress. The typical gate charge of 25 nC at 25 V gate voltage ensures fast switching speeds, contributing to high-frequency operation efficiency.

Additional features include a maximum gate-source voltage rating of 30 V and a forward voltage drop of 1.7 V, which are critical parameters in circuit design for voltage handling and conduction efficiency. Its compact dimensions (20 mm height, 15.5 mm length, and 4.5 mm width) allow it to fit into space-constrained PCB layouts.

Being RoHS compliant, the Toshiba TK12J60W,S1VQ(O MOSFET meets environmental standards and is manufactured in Japan, ensuring quality and reliable supply. Ideal for use in industrial electronics, power management systems, and construction of electrical device components.

Designed for through-hole mounting with TO-3PN package. Maximum continuous drain current rated at 11.5 amperes. Maximum drain-source voltage of 600 volts for robust operation. Low drain-source resistance of 0.3 ohms ensuring efficient conduction.

High power dissipation capability of 110 watts for demanding applications. Operating temperature range from -55°C to 150°C for reliability in harsh environments. Typical gate charge of 25 nC at gate-source voltage of 25 V.

Maximum gate-source voltage of 30 V with a forward voltage of 1.7 V. Compact dimensions: 20mm height, 15.5mm length, 4.5mm width. RoHS compliant and manufactured in Japan. Explore a wide range of semiconductor components and MOSFETs at EnvMart for your industrial electronics and power management needs.