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Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-247 IPW60R060P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPW60R060P7XKSA1 |
| Mount Type | Through Hole |
| Series | 600V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 48A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Maximum Power Dissipation Pd | 164W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | 4V |
| Forward Voltage Vf | 0.9V |
Key Features
- Maximum continuous drain current of 48 A ensures robust current handling.
- Maximum drain-source voltage is rated at 600 V for high-voltage applications.
- The TO-247 package offers reliable through-hole mounting with 3 pins.
- Low gate charge of 67 nC improves switching efficiency and reduces power loss.
- Maximum power dissipation is 164 W for thermal management in demanding environments.
- Operating temperature range from -55°C to 150°C supports varied industrial conditions.
- Integrated RG resistor reduces MOSFET oscillation sensitivity for stable operation.
- Rugged body diode construction enhances device durability under switching stress.
Product Description
Infineon IPW60R060P7XKSA1 is a 600V CoolMOS P7 Type N-Channel MOSFET designed for high efficiency power switching in industrial, electronic, and power management systems. It features a maximum continuous drain current of 48 A and a drain-source voltage rating of 600 V, making it ideal for high voltage, high power applications.
The MOSFET is housed in a TO-247 through-hole package with 3 pins for mounting flexibility and strong mechanical stability. Its advanced CoolMOS 7th generation technology ensures best-in-class Ron·A performance and low gate charge of 67 nC, which reduces switching losses and improves overall efficiency.
Operating over a wide temperature range from -55°C to 150°C, this device is suitable for demanding industrial environments. The integrated RG resistor helps to minimize oscillation sensitivity, enhancing stable and reliable operation. The rugged body diode construction adds robust switching capability under load conditions.
With a maximum power dissipation rating of 164 W and a forward voltage of 0.9 V, the IPW60R060P7XKSA1 provides efficient conduction and effective thermal management. The maximum gate-source voltage is 4 V to enable precise gate control in switching circuits.
Maximum continuous drain current of 48 A. Maximum drain-source voltage rating of 600 V. 3-pin TO-247 package ensures secure mounting. Low typical gate charge of 67 nC at Vgs=4 V. Maximum power dissipation of 164 W accommodates thermal requirements.
Operating temperature range from -55°C to 150°C. Integrated RG resistor reduces oscillation sensitivity. Durable rugged body diode construction. Forward voltage of 0.9 V for efficient conduction. Maximum gate-source voltage of 4 V for gate control.
Typical applications include industrial power supplies, motor drives, switching regulators, and electronic control units. The device is optimal for improving power efficiency and reliability in electronic semiconductor systems.
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Frequently Asked Questions
The maximum continuous drain current of the IPW60R060P7XKSA1 is rated at 48 A.
This MOSFET has a maximum drain-source voltage rating of 600 V, making it suitable for high-voltage applications.
It is housed in a TO-247 package, which allows for through-hole mounting with 3 pins.
The operating temperature range for this model is from -55°C to 150°C, accommodating various industrial conditions.
It has a maximum power dissipation rating of 164 W, which supports effective thermal management.
The typical gate charge is 67 nC at a gate-source voltage of 4 V, which helps reduce switching losses.
The forward voltage rating is 0.9 V, which contributes to efficient conduction.
It features a Type N channel, suitable for high efficiency power switching applications.
Yes, it includes an integrated RG resistor that helps minimize oscillation sensitivity for stable operation.
Typical applications include industrial power supplies, motor drives, switching regulators, and electronic control units.
The maximum gate-source voltage is 4 V, allowing for precise gate control in switching circuits.
The maximum drain-source resistance is rated at 60 mΩ, which enhances its efficiency in power management.
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