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Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-220 IPP60R280P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 10.2mm |
| Model | IPP60R280P7XKSA1 |
| Width | 15.93mm |
| Mount Type | Through Hole |
| Series | 600V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 72W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.9V |
Key Features
- Features best-in-class RonxA and low gate charge for efficient switching performance.
- Equipped with inherently rugged body diode and integrated RG to reduce MOSFET oscillation sensitivity.
- Designed for through-hole mounting with TO-220 package type, facilitating easy integration.
- Operates reliably in a wide temperature range from -55°C to 150°C.
- Draws maximum continuous drain current of 12A with maximum drain-source voltage rated at 600V.
- Offers a maximum power dissipation of 72W for demanding power applications.
- Has low typical gate charge of 25 nC at Vgs, ensuring fast switching capabilities.
- Ideal for industrial electronics, power conversion, and switching devices.
Product Description
Infineon IPP60R280P7XKSA1 is a high-performance 600V CoolMOS P7 Type N-Channel MOSFET designed for efficient power management in electronic circuits. This 3-pin transistor in a TO-220 package provides a maximum continuous drain current of 12A and a maximum drain-source voltage of 600V, making it highly suited for industrial power electronic applications.
The enhancement mode channel ensures reliable switching and control, with a rugged body diode integrated for improved durability under switching stress. An integrated gate resistor minimizes oscillation sensitivity, enhancing circuit stability.
Key electrical features include a low typical gate charge of 25nC at the gate voltage, a forward voltage of 0.9V, and a maximum power dissipation rating of 72W. It supports operation over a wide temperature range from -55°C up to 150°C, ensuring suitability across various environmental conditions.
The TO-220 through-hole package facilitates ease of mounting and heat dissipation, with device dimensions of 15.93mm width, 10.2mm length, and 4.4mm height. It is not certified according to automotive standards or other approvals but is recognized for its application in power conversion, industrial electronics, and semiconductor device circuits.
Features best-in-class RonxA and low gate charge for efficient switching performance. Equipped with inherently rugged body diode and integrated RG to reduce MOSFET oscillation sensitivity. Designed for through-hole mounting with TO-220 package type, facilitating easy integration.
Operates reliably in a wide temperature range from -55°C to 150°C. Draws maximum continuous drain current of 12A with maximum drain-source voltage rated at 600V. Offers a maximum power dissipation of 72W for demanding power applications.
Has low typical gate charge of 25 nC at Vgs, ensuring fast switching capabilities. Ideal for industrial electronics, power conversion, and switching devices.
This MOSFET is commonly utilized in industrial power electronics, laboratory instrumentation, and switch-mode power supplies. Its rugged design and electrical characteristics make it a preferred choice for designers seeking high efficiency and reliability.
Explore more in our extensive selection of semiconductor devices and MOSFETs to find complementary components for your industrial and electronic design needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12A.
It has a maximum drain-source voltage rating of 600V.
The typical gate charge at Vgs is 25nC.
This MOSFET offers a maximum power dissipation of 72W.
The dimensions of the TO-220 package are 15.93mm in width, 10.2mm in length, and 4.4mm in height.
It operates reliably in a temperature range from -55°C to 150°C.
This model is designed for through-hole mounting.
This MOSFET is a Type N channel device.
The forward voltage is rated at 0.9V.
Yes, it is equipped with an inherently rugged body diode and an integrated gate resistor to reduce oscillation sensitivity.
It is commonly utilized in industrial power electronics, laboratory instrumentation, and switch-mode power supplies.
This model has a pin count of 3.
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