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DiodesZetex Isolated Dual Type N and Type P-Channel MOSFET, 9.6A, 35V, Enhancement Mode, 3-Pin TO-252 DMG4511SK4-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.7mm |
| Model | DMG4511SK4-13 |
| Width | 6.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, MIL-STD-202, UL 94V-0, RoHS, AEC-Q101 |
| Pin Count | 3 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 9.6A |
| Maximum Drain Source Voltage Vds | 35V |
| Maximum Drain Source Resistance Rds | 65mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.9W |
| Typical Gate Charge Qg @ Vgs | 8.8nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
| Transistor Configuration | Isolated |
Key Features
- Features a maximum continuous drain current of 9.6 amperes.
- Operates at a maximum drain-source voltage of 35 volts.
- Designed with an enhancement channel mode for efficient performance.
- Comes in a compact 3-pin TO-252 surface mount package.
- Offers maximum power dissipation up to 8.9 watts for reliable operation.
- Operates within a wide temperature range from -55°C to 150°C.
- Typical gate charge is 8.8 nanocoulombs at recommended gate-source voltage.
- Complies with automotive standard AEC-Q101 and environmental standards including RoHS.
Product Description
DiodesZetex DMG4511SK4-13 is a high-performance isolated dual MOSFET transistor combining both N-channel and P-channel types designed for surface mount applications in electronic circuits. It supports continuous drain current up to 9.6 amperes and withstands drain-source voltages up to 35 volts with an enhancement mode channel for superior switching capabilities.
The device comes in a TO-252 package with 3 pins and features a robust design enabling operation in harsh environments from -55°C to 150°C, making it suitable for automotive and industrial applications conforming to AEC-Q101 standards. The transistor’s maximum power dissipation is rated at 8.9 watts, providing reliable thermal management for medium power applications.
The typical gate charge of 8.8 nanocoulombs ensures efficient gate drive performance with a maximum gate-source voltage tolerance of 20 volts. The forward voltage drop is 1.2 volts, optimizing power consumption in circuit designs. This MOSFET complies with international standards such as RoHS, J-STD-020, MIL-STD-202, and UL 94V-0, ensuring environmental compliance and safety.
Physically, the device dimensions are length 6.7 mm, width 6.2 mm, and height 2.39 mm, designed for compact layout on printed circuit boards. Maximum continuous drain current of 9.6 A. Maximum drain-source voltage of 35 V.
Enhancement channel mode. TO-252 surface mount package with 3 pins. Maximum power dissipation of 8.9 W. Operating temperature range from -55°C to 150°C. Typical gate charge of 8.8 nC. Complies with AEC-Q101 automotive standard and environmental regulations.
Compact package dimensions (6.7 mm × 6.2 mm × 2.39 mm).
This MOSFET is ideal for electronic designs requiring isolated dual N and P-channel transistors for switching and amplification. Common industrial uses include automotive electronics, power management circuits, and general semiconductor applications in industrial equipment.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.6 amperes.
It can withstand a maximum drain-source voltage of 35 volts.
This model comes in a TO-252 surface mount package with 3 pins.
It operates within a temperature range from -55°C to 150°C.
The typical gate charge is 8.8 nanocoulombs at the recommended gate-source voltage.
It complies with several standards including AEC-Q101, RoHS, J-STD-020, MIL-STD-202, and UL 94V-0.
The maximum power dissipation is rated at 8.9 watts.
The forward voltage drop is 1.2 volts, which helps optimize power consumption.
The dimensions are 6.7 mm in length, 6.2 mm in width, and 2.39 mm in height.
It features both N-channel and P-channel types in a dual configuration.
The maximum gate-source voltage tolerance is 20 volts.
This model is commonly used in automotive electronics, power management circuits, and general semiconductor applications in industrial equipment.
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