Infineon HEXFET N-Channel MOSFET 33A 100V Enhancement Mode Surface Mount 3-Pin TO-263 IRF540NSTRLPBF

Infineon IRF540NSTRLPBF is a high-performance HEXFET type N-Channel MOSFET designed for industrial and electronic power management applications. It features a maximum continuous drain current of 33 amps and a maximum drain-source voltage of 100 volts. This enhancement mode MOSFET operates efficiently with a low Rds(on) of 44 milliohms, allowing reduced power loss and thermal generation.

Housed in a TO-263 surface mount package with 3 pins, it is suitable for automated PCB assembly processes. The device supports high power dissipation up to 130 watts and functions reliably across a broad temperature range from -55°C to +175°C, making it ideal for demanding environments such as motor control, power supplies, and renewable energy systems.

The typical gate charge of 71 nC at Vgs=10 V ensures rapid switching capabilities, minimizing energy loss in switching circuits. The maximum gate-source voltage rating of ±20 V provides protection against overvoltage conditions during normal use.

Applications include industrial automation power management, high-efficiency power supplies, and electrical engineering motor control, as well as renewable energy conversion systems. The enhancement mode allows for better switching performance by providing greater control over the conduction state.

Maximum continuous drain current: 33 A. Maximum drain-source voltage: 100 V. Low Rds(on) of 44 milliohms. Power dissipation: 130 W. Operating temperature range: -55°C to 175°C. Gate charge: 71 nC typical. Maximum gate-source voltage: ±20 V.

Package: 3-pin TO-263 surface mount.

For professionals requiring reliable, high-efficiency MOSFET components, this Infineon HEXFET device provides proven performance and ease of integration. Explore more electronic components within the MOSFET category at EnvMart.