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DiodesZetex Type N-Channel MOSFET 39 A, 40 V Enhancement, 3-Pin TO-252 DMN4010LK3

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DiodesZetex Type N-Channel MOSFET 39 A, 40 V Enhancement, 3-Pin TO-252 DMN4010LK3

Name: DiodesZetex Type N-Channel MOSFET 39 A, 40 V Enhancement, 3-Pin TO-252 DMN4010LK3
Brand: DiodesZetex
SKU: 108069
Price: 0.94 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	2.39mm
Length	6.7mm
Model	DMN4010LK3
Width	6.2mm
Mount Type	Surface
Series	DMN4010LK3
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type N
Maximum Continuous Drain Current Id	39A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	14.5mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.6W
Typical Gate Charge Qg @ Vgs	37nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	0.72V

Key Features

This is a 3-pin MOSFET in a TO-252 surface mount package.
The device has an enhancement-type channel mode ensuring efficient switching.
Maximum power dissipation is 1.6 W suitable for compact circuit designs.
Operating temperature range extends from -55°C to 150°C.
Low maximum drain source resistance at 14.5 milliohms minimizes power loss.
Automotive grade with AEC-Q101 certification for reliability in harsh environments.
Typical gate charge is 37 nC at gate-source voltage of 7 V aiding fast switching.
Maximum gate source voltage is 20 V, and forward voltage is 0.72 V.

Product Description

DiodesZetex DMN4010LK3 is a high-performance Type N-Channel MOSFET designed for surface mount applications in electronic circuits, providing a maximum continuous drain current of 39 A and a maximum drain-source voltage of 40 V. The enhancement mode channel ensures efficient switching with low power dissipation of 1.6 W.

This 3-pin device housed in a TO-252 package offers a compact solution with dimensions of 6.7 mm length, 6.2 mm width, and 2.39 mm height. Its robust operating temperature range from -55°C to 150°C makes it suitable for demanding industrial, automotive, and electronic equipment applications.

The DMN4010LK3 features a low maximum drain-source resistance of 14.5 milliohms, minimizing conduction losses and improving energy efficiency. It carries the AEC-Q101 automotive standard for reliability under harsh conditions, making it ideal for automotive and industrial power management systems.

With a typical gate charge of 37 nC at a gate-source voltage of 7 V and a maximum gate-source voltage of 20 V, the MOSFET enables fast and precise switching control. The forward voltage drop of 0.72 V supports low-loss operation in switching converter circuits, power amplifiers, and motor control.

This MOSFET is a versatile component for electronic engineers designing power switching and amplification stages in consumer electronics, industrial controllers, automotive electronics, and more. Its durable package and certified ratings offer confidence in long-term reliability and thermal stability.

This product is ideal for use in power regulation, switching circuits, and automotive electronics applications. The surface mount TO-252 package supports high-density PCB layouts and automated assembly processes. It ensures stable performance over a wide temperature range and electrical load variations.

DiodesZetex DMN4010LK3 MOSFET supports energy-efficient designs requiring low resistance and fast switching.

For engineers and procurement professionals seeking a robust, automotive-grade MOSFET for medium power applications, this component delivers proven performance and quality. Explore more semiconductor solutions and industrial electronics at EnvMart for your project needs.