DiodesZetex Dual Type P-Channel MOSFET, 1.03 A, 20 V Enhancement Mode, 6-Pin SOT-563 Package DMG1023UVQ-7

The DiodesZetex DMG1023UVQ-7 is a high-performance dual type P-channel MOSFET designed for efficient power switching with a maximum continuous drain current of 1.03 A and a maximum drain-source voltage of 20 V. Packaged in a compact 6-pin SOT-563 surface mount device, this MOSFET offers low on-state resistance (1.5 Ω) and low gate charge, making it well-suited for high-efficiency power management in automotive and industrial electronics.

With an enhancement mode channel, this device operates reliably over a wide temperature range from -55°C up to 150°C, meeting stringent automotive qualification under the AEC-Q101 standard. The compact form factor, coupled with its fast switching speed and low gate charge of 622.4 nC, enables efficient energy conversion and control on densely packed printed circuit boards.

This MOSFET configuration presents a forward voltage of -0.8 V and a maximum gate-source voltage of 6 V, optimized for performance in demanding electronic circuits. Key industrial applications include automotive power supplies, industrial control systems, and compact consumer electronic devices.

The physical dimensions of 1.6 mm length, 1.2 mm width, and 0.6 mm height ensure compatibility with modern miniaturized PCB layouts. The device consists of one element per chip and is surface mount mounted, ensuring ease of integration in automated assembly lines.

The device features low on-state resistance for efficient switching performance. It has a maximum continuous drain current of 1.03 amperes. Operates with a gate-source voltage of up to 6 volts and boasts a forward voltage drop of -0.8 V.

Packaged in a compact 6-pin SOT-563 surface mount package suitable for compact electronic designs. Designed for operation from -55°C to 150°C, supporting wide thermal ranges. Typical gate charge is low at 622.4 nC, enabling fast switching speeds.

Complies with Automotive Standard AEC-Q101 for automotive applications. Has dual transistor configuration with enhancement mode channel to optimize power efficiency. Physical dimensions are 1.6mm length, 1.2mm width, and 0.6mm height for space-constrained PCB layouts.

This product is an excellent choice for engineers and designers requiring a reliable and efficient dual P-channel MOSFET component for automotive, industrial, and electronic equipment applications.

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