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DiodesZetex Type N-Channel MOSFET 6.1 A 70 V Surface Mount 3-Pin TO-252 ZXMN7A11KTC

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 2.39mm
Length 6.73mm
Model ZXMN7A11KTC
Width 6.22mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type N
Maximum Continuous Drain Current Id 6.1A
Maximum Drain Source Voltage Vds 70V
Maximum Drain Source Resistance Rds 190mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 8.5W
Typical Gate Charge Qg @ Vgs 7.4nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.85V

Key Features

  • Maximum continuous drain current of 6.1 A for efficient power handling.
  • Compact TO-252 package type designed for surface mount applications.
  • Maximum drain-source voltage of 70 V ensures robustness under high voltage conditions.
  • Low maximum drain-source resistance of 190 milliohms for reduced power losses.
  • Enhancement mode channel for controlled switching operation.
  • Maximum power dissipation rating of 8.5 W for reliable thermal management.
  • Wide operating temperature range from -55°C up to 150°C supports harsh environments.
  • Typical gate charge of 7.4 nC enhances switching speed and efficiency.

Product Description

DiodesZetex ZXMN7A11KTC Type N-Channel MOSFET is a high-performance enhancement mode transistor designed for surface mount applications requiring robust power management. With a maximum continuous drain current of 6.1 A and drain-source voltage rating of 70 V, this MOSFET provides efficient switching with low conduction losses, aided by a maximum drain-source resistance of 190 milliohms.

The device is housed in a compact TO-252 package with 3 pins, facilitating easy integration on printed circuit boards. Its maximum power dissipation of 8.5 W ensures stability in demanding thermal environments, supported by operating temperatures ranging from -55°C to 150°C. Typical gate charge is low at 7.4 nC, allowing rapid switching and reduced switching losses.

This MOSFET is ideal for industrial, laboratory, manufacturing, power supply, and electronic circuit design applications where reliable high current and voltage control is required. Its surface mount configuration and precise dimensions (6.73 mm length, 6.22 mm width, 2.39 mm height) allow compact assembly in complex electronics.

Maximum continuous drain current of 6.1 A for efficient power handling. TO-252 surface mount package for compact installation. Maximum drain-source voltage of 70 V supports high voltage operations. Low resistance drain-source path reduces conduction losses.

Reliable operation across a wide temperature range from -55°C to 150°C. Typical gate charge of 7.4 nC facilitates fast switching. Supports enhancement mode switching for controlled performance. Compact 3-pin design adheres to standard mounting requirements.

Designed for industrial, manufacturing, and power electronics applications. Dimensions suitable for dense electronic assemblies. Explore more semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart for your industrial and electronic design needs.

DiodesZetex Type N-Channel MOSFET 6.1 A 70 V Surface Mount 3-Pin TO-252 ZXMN7A11KTC
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Frequently Asked Questions

The maximum continuous drain current for this model is 6.1 A, allowing for efficient power handling in various applications.

This MOSFET has a maximum drain-source voltage rating of 70 V, making it suitable for high voltage applications.

It is housed in a TO-252 package type, designed for surface mount applications.

The maximum power dissipation rating for this model is 8.5 W, ensuring reliable thermal management during operation.

The typical gate charge is 7.4 nC, which enhances switching speed and efficiency.

This MOSFET operates within a wide temperature range from -55°C to 150°C, supporting harsh environments.

This model features a 3-pin configuration, facilitating easy integration on printed circuit boards.

The maximum drain-source resistance is 190 milliohms, which helps reduce power losses during operation.

It uses an enhancement mode channel, allowing for controlled switching operation.

The forward voltage for this model is 0.85 V, which is relevant for its operation in circuits.

This MOSFET is ideal for industrial, laboratory, manufacturing, power supply, and electronic circuit design applications.

The maximum gate-source voltage for this device is 20 V, ensuring compatibility with various control signals.

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