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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | ZXMN7A11KTC |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 6.1A |
| Maximum Drain Source Voltage Vds | 70V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.5W |
| Typical Gate Charge Qg @ Vgs | 7.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.85V |
DiodesZetex ZXMN7A11KTC Type N-Channel MOSFET is a high-performance enhancement mode transistor designed for surface mount applications requiring robust power management. With a maximum continuous drain current of 6.1 A and drain-source voltage rating of 70 V, this MOSFET provides efficient switching with low conduction losses, aided by a maximum drain-source resistance of 190 milliohms.
The device is housed in a compact TO-252 package with 3 pins, facilitating easy integration on printed circuit boards. Its maximum power dissipation of 8.5 W ensures stability in demanding thermal environments, supported by operating temperatures ranging from -55°C to 150°C. Typical gate charge is low at 7.4 nC, allowing rapid switching and reduced switching losses.
This MOSFET is ideal for industrial, laboratory, manufacturing, power supply, and electronic circuit design applications where reliable high current and voltage control is required. Its surface mount configuration and precise dimensions (6.73 mm length, 6.22 mm width, 2.39 mm height) allow compact assembly in complex electronics.
Maximum continuous drain current of 6.1 A for efficient power handling. TO-252 surface mount package for compact installation. Maximum drain-source voltage of 70 V supports high voltage operations. Low resistance drain-source path reduces conduction losses.
Reliable operation across a wide temperature range from -55°C to 150°C. Typical gate charge of 7.4 nC facilitates fast switching. Supports enhancement mode switching for controlled performance. Compact 3-pin design adheres to standard mounting requirements.
Designed for industrial, manufacturing, and power electronics applications. Dimensions suitable for dense electronic assemblies. Explore more semiconductor components and MOSFETs in the Electronics & Electricals category at EnvMart for your industrial and electronic design needs.
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